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Analytik; ZEA-3
Controlling Electron Charge-Based Phenomena
2015
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Analytik; ZEA-3
Controlling Electron Charge-Based Phenomena
2015
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Journal Article
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Conference Presentation
1
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1
Journal Article
Polymorphous GdScO$_{3}$ as high permittivity dielectric
Schäfer, Anna
2015
Journal of alloys and compounds, 651 (2015) S. 514–520
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2
Conference Presentation
High-k/metal gate stacks on high Sn content GeSn alloys
Schulte-Braucks, Christian
2015
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3
Journal Article
High- k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
Wirths, Stephan
2015
ACS applied materials & interfaces, 7 (2015) 1, S. 62 - 67
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4
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Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
Liu, Linjie
2015
Microelectronic engineering, 139 (2015) S. 26 - 30
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5
Journal Article
Hexagonal LaLuO3 as high-κ dielectric
Schäfer, Anna
2015
Journal of vacuum science & technology / B, 33 (2015) 1, S. 01A104
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Journal Article
4
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Mantl, Siegfried
4
Breuer, Uwe
3
Mussler, Gregor
3
Wirths, Stephan
3
Besmehn, Astrid
2
Fox, Alfred
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Hardtdegen, Hilde
2
Luysberg, Martina
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Mikulics, Martin
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Schubert, Jürgen
2
Schäfer, Anna
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Tiedemann, Andreas
2
Wendt, Fabian
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Baert, Bruno
1
Bihlmayer, Gustav
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Buca, Dan Mihai
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Di, Zengfeng
1
Hartmann
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Hartmann, Jean-Michel
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Holländer, Bernhard
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Ikonic
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Ikonic, Zoran
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Knoll, Lars
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Lehndorff, Thomas
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Liu, Linjie
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Nguyen, Ngoc D.
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Niu, G.
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Niu, Gang
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Research Program
Controlling Electron Charge-Based Phenomena
Controlling Spin-Based Phenomena
1
Energy Efficient Tunnel FET Switches and Circuits
1
Contributing Institute
Analytik; ZEA-3
Halbleiter-Nanoelektronik; PGI-9
5
JARA-FIT; JARA-FIT
4
Mikrostrukturforschung; PGI-5
2
Elektronische Eigenschaften; PGI-6
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