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21

Structural characterization of the phase change material Ge1Sb2Te4 grown by MOVPE

Riess, Sally
2015

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

22

Journal Article

Polymorphous GdScO$_{3}$ as high permittivity dielectric

Schäfer, Anna
2015

Journal of alloys and compounds, 651 (2015) S. 514–520

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

23

Journal Article

Tuning the orbital ordering in La 0.7 Sr 0.3 MnO 3 thin films in all-oxide hybrids

Doğanay, H.
2015

epl, 109 (2015) 6, S. 67007 -

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

24

Journal Article

Realization of a vertical topological p–n junction in epitaxial Sb$_{2}$Te$_{3}$/Bi$_{2}$Te$_{3}$ heterostructures

Eschbach, Markus
2015

Nature Communications, 6 (2015) S. 8816

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”
OpenAccess OpenAccess

25

Journal Article

Hexagonal GdScO 3 : an epitaxial high-κ dielectric for GaN

Schäfer, A.
2014

Semiconductor science and technology, 29 (2014) 7, S. 075005

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

26

Journal Article

Generation of circularly polarized radiation from a compact plasma-based extreme ultraviolet light source for tabletop X-ray magnetic circular dichroism studies

Wilson, Daniel
2014

Review of scientific instruments, 85 (2014) 10, S. 103110

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”
OpenAccess

27

Journal Article

Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators

Olbrich, P.
2014

Physical review letters, 113 (2014) 9, S. 096601

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”
Get full text OpenAccess

28

Conference Presentation

Spin Polarized Photoemission from Bi2Te3 and Sb2Te3 Topological Insulator Thin Films

Plucinski, Lukasz
2013

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

29

Journal Article

Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface

Nichau, Alexander
2013

The @journal of chemical physics, 138 (2013) 15, S. 154709

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”
OpenAccess

30

Metal organic chemical vapor deposition of GexSbyTez layers grown by using digermane

Rieß, Sally
2013

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

31

Chemical vapour deposition of chalcogenide phase change materials using digermane

Rieß, Sally
2013

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

32

Contribution to a conference proceedings

Chemical vapour deposition of chalcogenide phase change materials using digermane

Rieß, Sally
2013

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

33

Journal Article

Generation of THz transients by photoexcited single-crystal GaAs meso-structures

Zhang, Jie
2013

Applied physics / B, 113 (2013) 3, S. 339 - 344

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”
Get full text OpenAccess

34

Journal Article

Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV

Nichau, Alexander
2013

Applied physics letters, 102 (2013) 3, S. 031607

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”
OpenAccess Published under German "Allianz" Licensing conditions on 2013-01-25. Available in OpenAccess from 2013-01-25

35

Journal Article

Electronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111)

Plucinski, Lukasz
2013

Journal of applied physics, 113 (2013) 5, S. 053706

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”
Published under German "Allianz" Licensing conditions on 2013-02-04. Available in OpenAccess from 2013-02-04

36

Journal Article

Spin-polarization limit in $Bi_{2}Te_{3}$ Dirac cone studied by angle- and spin-resolved photoemission experiments and ab initio calculations

Herdt, A.
2013

Physical Review B Physical review / B, 87 87 (2013 2013) 3 3, S. 035127 035127

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”
OpenAccess

37

Journal Article

Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Yang, Shu
2013

Japanese journal of applied physics, 52 (2013) S. 08JN02 -

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

38

Contribution to a book

Towards Spin Electronic Devices Based on Semiconductor Nanowires

Heedt, Sebastian
2013

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

39

Contribution to a book
Contribution to a conference proceedings

Towards future III-nitride based THz OEICs in the UV range

Fox, A.
2012

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

40

Contribution to a book
Contribution to a conference proceedings

Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control

Trellenkamp, St.
2012

“...Elektronische Eigenschaften; PGI-6 Elektronische Eigenschaften...”

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