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1

Journal Article

New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance

Hardtdegen, H.
2006

Physica status solidi / A, 203 (2006) S. 1645 - 1649

2

Journal Article

Observation of growth during the MOVPE of III-nitrides

Hardtdegen, H.
2006

Journal de physique / 4, 132 (2006) S. 177 - 183

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3

Journal Article

The effect of carrier gas on GaN epilayer characteristics

Cho, Y. S.
2006

Physica status solidi / C, 3 (2006) S. 1408 - 1411

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4

Journal Article

Use of real time wafer temperature determination for the study of unintentional parameter influences in the MOVPE of nitrides

Hardtdegen, H.
2005

Physica status solidi / B, 242 (2005) S. 2581 - 2586

5

Journal Article

Uniform III-nitride growth in single wafer horizontal MOVPE reactors

Hardtdegen, H.
2005

Physica status solidi / A, 202 (2005) S. 744 - 748

6

Journal Article

Use of sic band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

Steins, R.
2004

Journal of crystal growth, 272 (2004)

7

Journal Article

MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry

Kaluza, N.
2004

Journal of crystal growth, 272 (2004) S. 100 - 105

8

Journal Article

MOVPE process for horizontal reactors with reduced parasitic deposition

Hardtdegen, H.
2004

Journal of crystal growth, 272 (2004) S. 407 - 414

9

Journal Article

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

Hardtdegen, H.
2004

Physica status solidi / A, 201 (2004) S. 312 - 319

10

Journal Article

Optimierung eines neuen GaN MOVPE-Wachstumsprozesses mit reduzierten parasitären Depositionen

Steins, R.
2004

Verhandlungen der Deutschen Physikalischen Gesellschaft, 39 (2004) S. 204

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