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Institut für Halbleiterschichten und Bauelemente; ISG-1
Steins, R.
Poster
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Steins, R.
Poster
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Select result number 1
1
Poster
Systematic study on the growth mechanism of GaN/sapphire epilayers grown with different H2 and N2 carrier gas
Cho, Y. S.
2006
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2
Poster
New Approaches for Growth Control of GaN Based HEMT Structures
Hardtdegen, H.
2006
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3
Poster
Influences of H2/N2 Carrier Gas Mixtures on the Characteristics of GaN Epilayers
Cho, Y. S.
2006
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4
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Improvement of buffer properties for HEMT application using N2 ambient in a horizontal MOVPE reactor with inverted gas inlet
Hardtdegen, H.
2006
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5
Poster
New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance
Hardtdegen, H.
2005
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6
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The effect of carrier gas on GaN epilayer characteristics
Cho, Y. S.
2005
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7
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Influence of MOVPE growth parameters on surface temperature with respect to GaN deposition
Hardtdegen, H.
2005
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8
Poster
Optimisation of GaN high temperature growth using N2 as carrier gas
Steins, R.
2005
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9
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In-situ monitoring of parameters influencing temperature in MOVPE nitride growth
Kaluza, N.
2005
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10
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MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry
Kaluza, N.
2004
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11
Poster
Uniform III-nitride growth in single wafer horizontal MOVPE reactors
Hardtdegen, H.
2004
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11
Document Type
Poster
Name
Hardtdegen, Hilde
11
Kaluza, N.
11
Steins, R.
Cho, Y. S.
9
Heidelberger, G.
4
Lüth, H.
4
more ...
Sofer, Z.
4
von der Ahe, M.
3
Bay, H.
2
Marso, M.
2
Thillosen, N.
2
Wirtz, K.
2
Alam, A.
1
Beccard, R.
1
Bimberg, D.
1
Christen, J.
1
Javorka, P.
1
Reißmann, L.
1
Schmitt, T.
1
Strittmatter, A.
1
Veit, P.
1
Zettler, J.-T.
1
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
6
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
11
Institut für Halbleiterschichten und Bauelemente; ISG-1
Scientific Report
2005
5
2006
4
2004
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