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21

Conference Presentation

In situ Untersuchungen von Wachstumsparametereinflüssen auf die MOVPE von GaN

Hardtdegen, H.
2005

22

In-situ monitoring of parameters influencing temperature in MOVPE nitride growth

Kaluza, N.
2005

23

Journal Article

Optimierung eines neuen GaN MOVPE-Wachstumsprozesses mit reduzierten parasitären Depositionen

Steins, R.
2004

Verhandlungen der Deutschen Physikalischen Gesellschaft, 39 (2004) S. 204

24

Conference Presentation

Optimization of nitride growth in single wafer horizontal MOVPE reactors for HEMTs

Kaluza, N.
2004

25

Conference Presentation

Einfluss von N2 als Trägergas für GaN Wachstum im invertierten Einlass

Steins, R.
2004

26

Conference Presentation

Luminescence Properties of Si-doped MOVPE n-GaN

Thillosen, N.
2004

27

Uniform III-nitride growth in single wafer horizontal MOVPE reactors

Hardtdegen, H.
2004

28

Journal Article

MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry

Kaluza, N.
2004

Journal of crystal growth, 272 (2004) S. 100 - 105

29

Journal Article

MOVPE process for horizontal reactors with reduced parasitic deposition

Hardtdegen, H.
2004

Journal of crystal growth, 272 (2004) S. 407 - 414

30

Journal Article

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

Hardtdegen, H.
2004

Physica status solidi / A, 201 (2004) S. 312 - 319

31

Journal Article

Use of sic band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

Steins, R.
2004

Journal of crystal growth, 272 (2004)

32

MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry

Kaluza, N.
2004

33

Conference Presentation

MOVPE process for horizontal reactors with reduced parasitic deposition

Hardtdegen, H.
2004

34

Conference Presentation

MOVPE GaN growth: determination of activation energy using in-situ reflectometry

Kaluza, N.
2004

35

Conference Presentation

Use of SiC band-gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

Steins, R.
2004

36

Conference Presentation

Optimierung eines neuen GaN Prozesses im Hinblick auf Homogenität

Steins, R.
2003

37

Conference Presentation

Use of Modeling to Develop a New GaN Growth Process with Reduced Parasitic Deposits

Kaluza, N.
2003

38

Conference Presentation

MOVPE GaN Growth: Determination of Activation Energy Using In-Situ Reflectometry

Kaluza, N.
2003

39

Talk (non-conference)

Employment of EpiR-TT during GaN growth

Schmidt, R.
2002

40

Conference Presentation

Über die Bestimmung der Wachstumstemperatur beim MOVPE-Wachstum von GaN auf Saphir

Schmidt, R.
2002

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