JuLib | Articles & more

1

Journal Article

Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition

Kügeler, C.
2011

Journal of vacuum science & technology / A, 29 (2011) S. 01AD01

“...2011...”

2

Journal Article

Control Molecule-based Transport for Future Molecular Devices

Karthäuser, S.
2011

Journal of physics / Condensed matter, 23 (2011) S. 013001

“...2011...”

3

Talk (non-conference)

Redox-based resistive switching - classification and variants; basic aspects of electrochemistry; electrochemical metallization memories

Waser, R.
2011

“...2011...”

4

Journal Article

Memristive switches with two switching polarities in a forming free device structure

Bruchhaus, R.
2011

MRS online proceedings library, 1337 (2011) S. mrss11-1337-q08-03

“...2011...”

5

Conference Presentation

Recent progress in ReRAM devices

Waser, R.
2011

“...2011...”

6

Conference Presentation

Valence change memories - fundamentals, prospects and challenges

Waser, R.
2011

“...2011...”

7

Conference Presentation

Redox-based resistive switching memories - the mystery of nanoionic processes

Waser, R.
2011

“...2011...”

8

Conference Presentation

Microscopic processes in redox-based resistive switching

Waser, R.
2011

“...2011...”

9

Conference Presentation

Redox-based resistive switching - the next step of Moore's law?

Waser, R.
2011

“...2011...”

10

Conference Presentation

Redox-based resistive switching - from semiconductors to chemiconductors?

Waser, R.
2011

“...2011...”

11

Conference Presentation

Redox-based memristive switching - scaling beyond flash?

Waser, R.
2011

“...2011...”

12

Journal Article

Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO(3)

Lenser, C.
2011

Physical Chemistry Chemical Physics, 13 (2011) S. 20779 - 20786

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-10-14. Available in OpenAccess from 2012-10-14

13

Journal Article

Complementary resistive switches (CRS): High speed performance for the application in passive nanocrossbar arrays

Rosezin, R.
2011

MRS online proceedings library, 1337 (2011) S. 43

“...2011...”

14

Journal Article

Comment on "Exponential ionic drift: fast switching and low volatility of thin-film memristors" by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94:515-519

Meuffels, P.
2011

Applied physics / A, 105 (2011)

“...2011...”

15

Journal Article

On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

Soni, R.
2011

Journal of applied physics, 110 (2011) S. 054509

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-09-09. Available in OpenAccess from 2011-09-09

16

Journal Article

Forming-free TiO2-based resistive switching devices on CMOS-compatible W-plugs

Hermes, C.
2011

IEEE Electron Device Letters, 32 (2011) S. 1588 - 1590

“...2011...”

17

Journal Article

Analysis of transient currents during ultrafast switching of TiO2 nanocrossbar devices

Hermes, C.
2011

IEEE Electron Device Letters, 32 (2011) S. 1116 - 1118

“...2011...”

18

Poster

Resistive switching characteristics and different forming states of Ti/Pr0.48Ca0.52MnO3 junctions

Park, C.
2011

“...2011...”

19

Poster

Effective mass and direction dependent Richardson constant calculated from ab-initio band structure for SrTiO3

Schroeder, H.
2011

“...2011...”

20

Conference Presentation

Leakage current simulation for MIM stacks with high-k

Schroeder, H.
2011

“...2011...”

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