JuLib | Articles & more

1

Journal Article

Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

Stepina, N.P.
2010

Journal of physics / Conference Series, 245 (2010) S. 012034

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2

Journal Article

Ferroelectricity in nonstoichiometric SrTiO3 films studied by ultraviolet Raman spectroscopy

Tenne, D.A.
2010

Applied physics letters, 97 (2010) S. 142901

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3

Journal Article

Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances

Amekura, H.
2010

Applied physics letters, 96 (2010) S. 023110

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4

Journal Article

Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

Gregusova, D.
2010

Japanese journal of applied physics, 49 (2010) S. 046504

5

Journal Article

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

Moers, J.
2010

Thin solid films, 518 (2010) S. 2565 - 2568

6

Journal Article

Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP

Cheng, X.
2010

Applied physics letters, 96 (2010) S. 022904

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7

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

8

Journal Article

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Habicht, S.
2010

Nanotechnology, 21 (2010) S. 105701

9

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

10

Journal Article

Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Knoll, L.
2010

IEEE Electron Device Letters, 31 (2010) S. 350 - 352

11

Journal Article

A strong ferroelectric ferromagnet created by means of spin-lattice coupling

Lee, J.H.
2010

Nature , 466 (2010) S. 954 - 958

12

Journal Article

Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric

Volk, C.
2010

Applied physics / A, 100 (2010) S. 305 - 308

13

Journal Article

LaLuO3 as high-k gate dielectric for InAs nanowire structures

Volk, C.
2010

Semiconductor science and technology, 25 (2010) S. 085001

14

Journal Article

Electric field tuning of hard polar phonons in strained SrTiO3 films

Skoromets, V.
2010

Journal of applied physics, 107 (2010) S. 124116

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15

Journal Article

Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size

Myllymäki, P.
2010

Journal of materials chemistry, 20 (2010) S. 4207 - 4212

16

Journal Article

An Efficient Finite-Element Approach for the Modeling of Planar Double-D Excitation Coils and Flaws in SQUID NDE Systems

Sarreshtedari, F.
2010

IEEE transactions on applied superconductivity, 20 (2010) S. 76 - 81

17

Journal Article

Adsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy

Lee, J.H.
2010

Applied physics letters, 96 (2010) S. 262905

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18

Journal Article

RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um

Kordos, P.
2010

IEEE Electron Device Letters, 31 (2010) S. 180 - 182

19

Journal Article

Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases

Akabori, M.
2010

Physica / E, 42 (2010) S. 1130 - 1133

20

Journal Article

Molecular properties of liquid crystals in the terahertz frequency range

Vieweg, N.
2010

Optics express, 18 (2010) S. 6097 - 6107

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