JuLib | Articles & more - {"Kalisch, H."}

1

Electronic properties in MOCVD mono-and bilayer MoS2 on CVD single-layer graphene on alpha-Al2O3 (0001) at atomic resolution

Wördenweber, Henrik
2022

“...Kalisch, H....”

2

Poster

CVD growth of single layer graphene on α-Al2O3 and multiscale analysis of MoS2/Graphene/α-Al2O3 2D-layer stacks

Wördenweber, Henrik
2021

“...Kalisch, H....”
OpenAccess

3

Poster

Nanoscale characterization of single layer graphene on α-Al2O3 (0001)

Wördenweber, Henrik
2021

“...Kalisch, H....”
OpenAccess

4

Journal Article

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces

Reuters, B.
2014

Journal of physics / D, 47 (2014) 17, S. 175103

“...Kalisch, H....”

5

Journal Article

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Reuters, Benjamin
2013

Journal of electronic materials, 42 (2013) 5, S. 826 - 832

“...Kalisch, H....”

6

Journal Article

AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

Witte, W
2013

Semiconductor science and technology, 28 (2013) 8, S. 085006 -

“...Kalisch, H...”

7

Journal Article

Quanternary Enhancement-Mode HFET With In Situ SiN Passivation

Ketteniss, N.
2012

IEEE Electron Device Letters, 33 (2012) S. 519 - 521

“...Kalisch, H....”

8

Journal Article

Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices

Ketteniss, N.
2012

Semiconductor science and technology, 27 (2012) S. 055012

“...Kalisch, H....”

9

Conference Presentation

Untersuchungen zum Indiumeinbau und zur Relaxation in InGaN‐Schichten für die solareWasserstofferzeugung

Finken, M.
2012

“...Kalisch, H....”

10

Journal Article

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

Reuters, Benjamin
2012

Journal of applied physics, 112 (2012) 9, S. 093524 -

“...Kalisch, H...”
Published under German "Allianz" Licensing conditions on 2012-11-13. Available in OpenAccess from 2012-11-13

11

Journal Article

Growth Studies on Quaternary AlInGaN Layers for HEMT Applicationf

Reuters, Benjamin
2012

Journal of electronic materials, 41 (2012) 5, S. 905 - 909

“...Kalisch, H....”

12

Journal Article

New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance

Hardtdegen, H.
2006

Physica status solidi / A, 203 (2006) S. 1645 - 1649

“...Kalisch, H....”

13

Journal Article

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Si-Substraten

Kalisch, H.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 220

“...Kalisch, H....”

14

Conference Presentation

Silicon (111) as alternative substrate for AlGaN/GaN HEMT

Dikme, Y.
2003

“...Kalisch, H....”

15

Journal Article

Si(111) as alternative substrate for AlGaN/GaN HEMT

Dikme, Y.
2003

Physica status solidi / C (2003) S. 2385 - 2388

“...Kalisch, H....”

16

Conference Presentation

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

“...Kalisch, H....”

17

Conference Presentation

Growth of buffer structures for AlGaN/GaN HEMT on silicon substrates

Dikme, Y.
2003

“...Kalisch, H....”

18

Journal Article

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

Physica status solidi / A, 200 (2003) S. 179 - 182

“...Kalisch, H....”

19

Conference Presentation

Growth and characterisation of AlGaN/GaN-HEMTs on silicon substrates

Dikme, Y.
2002

“...Kalisch, H....”

20

Conference Presentation

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Silizium-Substraten

Dikme, Y.
2002

“...Kalisch, H....”

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