JuLib | Articles & more - {"Lantier, R."}

1

Journal Article

Growth at GaN/AlN heterostructures : a local view

Boscherini, P. C.
2001

Materials science and engineering / B, 86 (2001) S. 225

“...Lantier, R....”

2

Contribution to a book
Contribution to a conference proceedings

AlGaN/GaN MBE heterostructures : polarization effects and their implication on electronic properties

Rizzi, A.
2001

“...Lantier, R....”

3

Journal Article

Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide

de Vittorio, M.
2000

Solid state electronics, 44 (2000) S. 465

“...Lantier, R....”

4

Journal Article

Boundary conditions and the macroscopic field at SiC/AIN and SiC/GaN heterostructures

Rizzi, A.
2000

Physica status solidi / A, 177 (2000) S. 165

“...Lantier, R....”

5

Talk (non-conference)

Optical emission from surface and buried AlGaN/GaN MQW grown by MBE on 6H-SiC

Lantier, R.
2000

“...Lantier, R....”

6

Journal Article

Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001): heterojunction electronic properties

Lantier, R.
2000

Physica status solidi / A, 176 (2000) S. 615

“...Lantier, R....”

7

Contribution to a book
Contribution to a conference proceedings

Optical emission from surface and buried AlGaN/GaN MQW grown by MBE on 6H-SiC

Lantier, R.
2000

“...Lantier, R....”

8

Journal Article

MBE growth and structural properties of GaN and AlN on 3CSiC(001) substrates

Gerthsen, D.
1999

Journal of crystal growth, 200 (1999) S. 353

“...Lantier, R....”

9

Journal Article

Evidence for relaxed and high quality growth of GaN on SiC(0001)

Boscherini, P. C.
1999

Applied physics letters, 74 (1999) S. 3308

“...Lantier, R....”
OpenAccess OpenAccess

10

Journal Article

Influence of the first preparation steps on the properties of GaN layers grown on 6H-SiC by MBE

Lantier, R.
1999

MRS internet journal of nitride semiconductor research, 4S1 (1999) S. G.3.50

“...Lantier, R....”

11

Journal Article

Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001) : heterojunction electronic properties

Lantier, R.
1999

Physica status solidi / A, 176 (1999) S. 615

“...Lantier, R....”

12

Journal Article

AlN and GaN epitaxial heterojunctions on 6H-SiC(0001) : valence band offset and polarization fields

Rizzi, A.
1999

Journal of vacuum science & technology / B, 17 (1999) S. 1674

“...Lantier, R....”

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