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1

Journal Article

A novel two-color photodetector based on an InAlAs-InGaAs HEMT layer structure

Marso, M.
2004

IEEE photonics technology letters, 16 (2004) S. 2541 - 2543

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2

Journal Article

AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

OpenAccess

3

Conference Presentation

AlGaN/GaN HEMTs on silicon substrates

Javorka, P.
2002

4

Conference Presentation

AlGaN/GaN HEMTs on silicon substrates

Marso, M.
2002

5

Journal Article

AlGaN/GaN HEMTs on silicon substrates with fT of 32/20 GHz and fmax of 27/22 GHz for 0.5/0.7 µm gate length

Javorka, P.
2002

Electronics letters, 38 (2002) S. 288 - 289

6

Journal Article

Annealing of Schottky contacts deposited on dry etched AlGaN/GaN

Kuzmik, J.
2002

Semiconductor science and technology, 17 (2002) S. L76 - L78

7

Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

8

Journal Article

Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation

Bernát, J.
2003

Applied physics letters, 83 (2003) S. 5455

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9

Contribution to a book
Contribution to a conference proceedings

DC and Pulse Behaviour of Undoped and Doped GaN/AlGaN/GaN/SiC HEMTs

Bernát, J.
2004

10

Conference Presentation

DC and Pulse Behaviour of Undoped and Doped GaN/AlGaN/GaN/SiC HEMTs

Bernát, J.
2004

11

Contribution to a book
Contribution to a conference proceedings

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation

Bernát, J.
2004

12

Talk (non-conference)

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation

Bernát, J.
2004

13

Journal Article

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

Kuzmik, J.
2002

IEEE Transactions on Electron Devices, 49 (2002) S. 1496 - 1498

OpenAccess

14

Contribution to a book
Contribution to a conference proceedings

Double gate MOSFET with vertical channel

Moers, J.
2003

15

Talk (non-conference)

Double gate MOSFET with vertical channel

Moers, J.
2003

16

Talk (non-conference)

Double-gate MOSFET with vertical layout

Moers, J.
2002

17

Journal Article

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Bernát, J.
2003

Solid state electronics, 47 (2003) S. 2097 - 2103

18

Conference Presentation

Effect of Transistor Geometry on DC and RF Performance of AlGaN/GaN HEMTs on Silicon Substrate

Javorka, P.
2003

19

Journal Article

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

Kuzmik, J.
2004

Solid state electronics, 48 (2004) S. 271 - 276

20

Contribution to a book
Contribution to a conference proceedings

Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface

Dubecky, F.
2002

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