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Breuer, Uwe
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Holländer, Bernhard
Analytik; ZEA-3
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Breuer, Uwe
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Holländer, Bernhard
Analytik; ZEA-3
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Journal Article
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1
Journal Article
Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
Liu, Linjie
2015
Microelectronic engineering, 139 (2015) S. 26 - 30
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2
Journal Article
Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces
Reuters, B.
2014
Journal of physics / D, 47 (2014) 17, S. 175103
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3
Journal Article
SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications
Wirths, S.
2014
Thin solid films, 557 (2014) S. 183 - 187
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4
Conference Presentation
Epitaxial growth studies of SiGe and SiGeSn
Wirths, S.
2013
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5
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Growth of graded doped Si/SiGe Heterostructure Tunnel FET
Wirths, S.
2013
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6
Journal Article
Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
Zhang, B.
2013
Nuclear instruments & methods in physics research / B, 307 (2013) S. 408 - 411
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7
Journal Article
Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
Nichau, Alexander
2013
The @journal of chemical physics, 138 (2013) 15, S. 154709
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8
Conference Presentation
SiGeSn Growth Studies using Reduced Pressure CVD Towards Optoelectronic Applications
Wirths, Stephan
2013
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Journal Article
5
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Breuer, Uwe
Holländer, Bernhard
Mantl, Siegfried
7
Buca, Dan Mihai
6
Mussler, Gregor
5
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Zhao, Qing-Tai
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Biswas, A.
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Castro, G. R.
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Di, Zengfeng
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Hartmann, J. -M.
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Research Program
Frontiers of charge based Electronics
7
Controlling Electron Charge-Based Phenomena
1
Exploratory materials and phenomena
1
Contributing Institute
Analytik; ZEA-3
Halbleiter-Nanoelektronik; PGI-9
8
JARA-FIT; JARA-FIT
2
Elektronische Eigenschaften; PGI-6
1
Weiche Materie; ICS-3
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