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1

Conference Presentation

Effect of Transistor Geometry on DC and RF Performance of AlGaN/GaN HEMTs on Silicon Substrate

Javorka, P.
2003

2

Journal Article

Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

Wolter, M.
2002

Journal of electronic materials, 31 (2002) S. 1321 - 1324

3

Conference Presentation

Investigation of AlGaN/GaN HEMTs on Si substrates using backgating

Marso, M.
2002

4

Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

5

Conference Presentation

Growth and characterisation of AlGaN/GaN-HEMTs on silicon substrates

Dikme, Y.
2002

6

Conference Presentation

Investigation of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

7

Conference Presentation

AlGaN/GaN HEMTs on silicon substrates

Marso, M.
2002

8

Journal Article

AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

OpenAccess

9

Journal Article

Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates

Kalisch, H.
2002

Physica status solidi / A, 194 (2002) S. 464 - 467

10

Journal Article

Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

Physica status solidi / C (2002) S. 82 - 85

11

Journal Article

Investigation of AlGaN/GaN HEMTs on Si substrate using backgating

Marso, A.
2002

Physica status solidi / C (2002) S. 65 - 68

12

Journal Article

AlGaN/GaN round-HEMTs on (111) silicon substrates

Javorka, P.
2001

Electronics letters, 37 (2001) S. 1478

13

Journal Article

AlGaN/GaN HEMT optimization using the RoundHEMT technology

Marso, M.
2001

Physica status solidi / A, 188 (2001) S. 199

14

Conference Presentation

AlGaN/GaN HEMT optimization using the RoundHEMT technology

Marso, M.
2001

15

Talk (non-conference)

Optimization of AlGaN/GaN HEMT structures using the Round HEMT technology

Marso, M.
2001

16

Investigations on the influence of traps in AlGaN/GaN HEMTs

Wolter, M.
2001

17

Conference Presentation

Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE

Alam, A.
2001

18

Talk (non-conference)

From GaN epitaxy to design-oriented device modeling : the GaN electronics consortium at Aachen, Germany

Jansen, R.
2001

19

Conference Presentation

GaN and AlGaN/GaN HEMT on (111) Silicon Substrates

Alam, A.
2001

20

Talk (non-conference)

Investigations on the influence of traps in AlGaN/GaN HEMTs

Wolter, M.
2001

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