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1

Journal Article

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Mikulics, V. V.
2005

Applied physics letters, 86 (2005) S. 211110-1 - 211110-3

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2

Journal Article

Growth and properties of GaN and AlN layers on silver substrates

Mikulics, V. V.
2005

Applied physics letters, 87 (2005) S. 212109

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3

Journal Article

Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures

Indlekofer, K. M.
2002

Physica status solidi / B, 234 (2002) S. 769 - 772

4

Journal Article

III-V semiconductor interface properties as a knowledge basis for modern heterostructure devices

Rizzi, A.
2002

Applied physics / A, 75 (2002) S. 69 - 77

5

Journal Article

Comment on : Influence of crystal polarity on the properties of Pt/GaN Schottky diodes (77 (2000), S. 2012)

Rizzi, A.
2002

Applied physics letters, 80 (2002) S. 530 - 531

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6

Journal Article

Surface potential at as grown GaN(0001) MBE layers

Kocan, M.
2002

Physica status solidi / B, 234 (2002) S. 773 - 777

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