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1

Conference Presentation

Effect of Transistor Geometry on DC and RF Performance of AlGaN/GaN HEMTs on Silicon Substrate

Javorka, P.
2003

2

Journal Article

Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates

Kalisch, H.
2002

Physica status solidi / A, 194 (2002) S. 464 - 467

3

Journal Article

Investigation of AlGaN/GaN HEMTs on Si substrate using backgating

Marso, A.
2002

Physica status solidi / C (2002) S. 65 - 68

4

Journal Article

Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

Physica status solidi / C (2002) S. 82 - 85

5

Conference Presentation

Investigation of AlGaN/GaN HEMTs on Si substrates using backgating

Marso, M.
2002

6

Conference Presentation

AlGaN/GaN HEMTs on silicon substrates

Marso, M.
2002

7

Journal Article

AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

OpenAccess

8

Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

9

Conference Presentation

Growth and characterisation of AlGaN/GaN-HEMTs on silicon substrates

Dikme, Y.
2002

10

Conference Presentation

Investigation of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

11

Talk (non-conference)

Investigations on the influence of traps in AlGaN/GaN HEMTs

Wolter, M.
2001

12

Investigation of AIN nucleation layer growth on sapphire substrates with respect to GaN buffer characteristics for HEMT application

Nastase, N.
2001

13

On the influence of the nucleation parameters on GaN buffer layer properties used for HEMT application

Nastase, N.
2001

14

Conference Presentation

GaN and AlGaN/GaN HEMT on (111) Silicon Substrates

Alam, A.
2001

15

Conference Presentation

The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application

Nastase, N.
2001

16

Conference Presentation

Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE

Alam, A.
2001

17

Talk (non-conference)

A comparison of the material properties of AlGaN/GaN epilayers for HEMT application grown on different sapphire substrates

Nastase, N.
2001

18

Conference Presentation

AlGaN/GaN HEMT optimization using the RoundHEMT technology

Marso, M.
2001

19

Talk (non-conference)

Optimization of AlGaN/GaN HEMT structures using the Round HEMT technology

Marso, M.
2001

20

Journal Article

AlGaN/GaN round-HEMTs on (111) silicon substrates

Javorka, P.
2001

Electronics letters, 37 (2001) S. 1478

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