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1

Ferroelectricity in Lu doped HfO2 layers

Tromm, T. C. U.
2017

Applied physics letters, 111 (2017) 14, S. 142904 -

Published on 2017-10-03. Available in OpenAccess from 2018-10-03. Published on 2017-10-03. Available in OpenAccess from 2018-10-03.

2

Abstract

Study of GeSn/(Si)Ge(Sn) Quantum Structures for Light Emitters

Rainko, Denis
2016

OpenAccess OpenAccess

3

Journal Article

Interface Engineering to Create a Strong Spin Filter Contact to Silicon

Caspers, Christian
2016

Scientific reports, 6 (2016) S. 22912

OpenAccess OpenAccess

4

Contribution to a book

Ternary Rare Earth Based Oxides for Nitride Based Devices

Tromm, T. C. U.
2016

5

Conference Presentation

Structural Study of Weak Topological Insulator Bi1Te1 Films on Si(111) grown by Molecular Beam Epitaxy

Lanius, Martin
2016

6

Journal Article

Realization of a vertical topological p–n junction in epitaxial Sb$_{2}$Te$_{3}$/Bi$_{2}$Te$_{3}$ heterostructures

Eschbach, Markus
2015

Nature Communications, 6 (2015) S. 8816

OpenAccess OpenAccess

7

Journal Article

Polymorphous GdScO$_{3}$ as high permittivity dielectric

Schäfer, Anna
2015

Journal of alloys and compounds, 651 (2015) S. 514–520

8

Journal Article

Hexagonal LaLuO3 as high-κ dielectric

Schäfer, Anna
2015

Journal of vacuum science & technology / B, 33 (2015) 1, S. 01A104

9

Journal Article

Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi $_{2}$ Te $_{3}$ Topological Insulator Thin Films

Kampmeier, Jörn
2015

Crystal growth & design, 15 (2015) 1, S. 390 - 394

10

Journal Article

Lasing in direct-bandgap GeSn alloy grown on Si

Wirths, S.
2015

Nature photonics, 9 (2015) 2, S. 88 - 92

11

Conference Presentation

Hexagonal LaLuO$_{3}$ as high-k dielectric

Schäfer, Anna
2014

2014

12

Journal Article

Hexagonal GdScO 3 : an epitaxial high-κ dielectric for GaN

Schäfer, A.
2014

Semiconductor science and technology, 29 (2014) 7, S. 075005

13

Conference Presentation

Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si

Nichau, Alexander
2013

14

Journal Article

Molecular Beam Epitaxy Growth of GaAs/InAs Core-Shell Nanowires and Fabrication of InAs Nanotubes

Rieger,T.
2012

Nano letters, 12 11, S. 5559–5564

15

Journal Article

LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process

Nichau, A.
2012

Solid state electronics, 71 (2012) S. 19 - 24

16

Journal Article

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus, H.
2012

Journal of applied physics, 111 (2012) S. 014904

Get full text Published under German "Allianz" Licensing conditions on 2012-01-05. Available in OpenAccess from 2012-01-05

17

Contribution to a book

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

Lopes, J.M.J.
2011

18

Contribution to a book
Contribution to a conference proceedings

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

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