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1

Journal Article

Theoretico-experimental analysis of bistability in the oscillatory response of a TaOx ReRAM to pulse train stimuli

Schmitt, N.
2024

Frontiers in nanotechnology, 6 (2024) S. 1301320

OpenAccess

2

Journal Article

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Völkel, Lukas
2024

Advanced functional materials, 34 (2024) 15, S. 2300428

OpenAccess

3

Journal Article

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

Falcone, Donato Francesco
2024

Nanoscale horizons, 9 (2024) 5, S. 775-784

OpenAccess

4

Journal Article

Accurate Evaluation Method for HRS Retention of VCM ReRAM

Kopperberg, N.
2024

APL materials, 12 (2024) 3, S. 031112

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5

Journal Article

Ternary Łukasiewicz logic using memristive devices

Bengel, Christopher
2023

Neuromorphic computing and engineering, 3 (2023) 4, S. 044001 -

OpenAccess

6

Journal Article

Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices

Aussen, Stephan
2023

Advanced electronic materials, 9 (2023) 12, S. 2300520

OpenAccess OpenAccess

7

Journal Article

A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks

Funck, Carsten
2023

Advanced intelligent systems, 1 (2023) S. 2300129

OpenAccess

8

Journal Article

Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

Frahm, T.
2023

IEEE journal of the Electron Devices Society, 11 (2023) S. 432 - 437

OpenAccess

9

Journal Article

Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars

Brackmann, Leon
2023

Advanced intelligent systems, 6 (2023) 3, S. 2300579

OpenAccess

10

Journal Article

A Study of the Electroforming Process in 1T1R Memory Arrays

Son, Seokki
2023

IEEE transactions on computer-aided design of integrated circuits and systems, 42 (2023) 2, S. 558 - 568

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11

Journal Article

Tailor-made synaptic dynamics based on memristive devices

Bengel, Christopher
2023

Frontiers in electronic materials, 3 (2023) S. 1061269

OpenAccess

12

Journal Article

Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Schön, Daniel
2023

Advanced functional materials, 33 (2023) 22, S. 2213943 -

OpenAccess

13

Journal Article

Simulating the filament morphology in electrochemical metallization cells

Buttberg, Milan
2023

Neuromorphic computing and engineering, 3 (2023) 2, S. 024010 -

OpenAccess

14

Journal Article

Review on Resistive Switching Devices Based on Multiferroic BiFeO3

Zhao, Xianyue
2023

Nanomaterials, 13 (2023) 8, S. 1325 -

OpenAccess

15

Journal Article

Bit slicing approaches for variability aware ReRAM CIM macros

Bengel, Christopher
2023

Information technology (2023) S. 1

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16

Journal Article

Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity

Sommer, Nils
2023

Physical review applied, 19 (2023) 4, S. 044084

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17

Contribution to a conference proceedings
Journal Article

Performance Analysis of Memristive-CNN based on a VCM Device Model

Wang, Yongmin
2022

... IEEE International Symposium on Circuits and Systems proceedings, 1 (2022) S. 1

18

Journal Article

Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices

Ntinas, Vasileios
2022

IEEE transactions on circuits and systems / 2, 69 (2022) 5, S. 2473 - 2477

OpenAccess Restricted

19

Journal Article

Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors

Chekol, Solomon Amsalu
2022

Advanced functional materials, 32 (2022) 15, S. 2111242 -

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20

Journal Article

Effect of electron conduction on the read noise characteristics in ReRAM devices

Schnieders, K.
2022

APL materials, 10 (2022) 10, S. 101114 -

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