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1

Journal Article

Transport and noise features in AlGaN/GaN field effect transistors with nanometer-scaling gate length

Vitusevich, S. A.
2005

International journal of nanoscience, 04 (2005) S. 1001 - 1006

2

Conference Presentation

High Frequency Noise in AlGaN/GaN Heterostructures

Vitusevich, S. A.
2005

3

Contribution to a book
Contribution to a conference proceedings

Influence of small doses of gamma irradiation on transport and noise properties of SiC MESFETs

Vitusevich, S. A.
2005

4

Conference Presentation

Influence of small doses of gamma irradiation on transport and noise properties of SiC MESFETs

Vitusevich, S. A.
2005

5

Contribution to a book
Contribution to a conference proceedings

Magnetoresistance of Two-Dimensional Electron GaS in AlGaN/GaN Quantum-Sized Heterostructures

Vitusevich, S. A.
2005

6

Contribution to a book
Contribution to a conference proceedings

Noise study of AlGaN/GaN HEMTs and X-Band Oscillators

Danylyuk, S. V.
2005

7

Noise Study of AlGaN/GaN HEMTs and X-Band Oscillators

Danylyuk, S. V.
2005

8

Journal Article

Dynamic redistribution of the electric field of the channel in AlGaN/GaN high electron mobility transistor with nanometer-scale gate length

Vitusevich, S. A.
2005

Applied physics letters, 87 (2005) S. 192110

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9

Journal Article

Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures

Vitusevich, S. A.
2005

Physica status solidi / A, 202 (2005) S. 816 - 819

10

Contribution to a book
Contribution to a conference proceedings

Aluminium nitride-niobium-gold multi-layers and free standing structures for MEMS

Danylyuk, S.
2005

11

Contribution to a book
Contribution to a conference proceedings

Low-temperature transport in AlGaN/GaN 2D electron systems

Vitusevich, S. A.
2005

12

Contribution to a book
Contribution to a conference proceedings

Subnanosecond kinetics study of 2D-hot carrier transport in GaN/AlGaN heterostructures

Danilchenko, B. A.
2005

13

Journal Article

Measurement of Millimeter-Wave Surface Resistance and Temperature Dependence of Reactance of Thin HTS Films Using Quasi-Optical Dielectric Resonator

Cherpak, N. T.
2005

IEEE transactions on applied superconductivity, 15 (2005) S. 2919 - 2992

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14

Journal Article

Dependence of magnetic penetration depth on the thickness of superconducting Nb thin film

Gubin, A. I.
2005

Physical Review B Physical review / B, 72 72 (2005 2005) 6 6, S. 064503 064503

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15

Contribution to a book
Contribution to a conference proceedings

High Frequency Noise in AlGaN/GaN Heterostructures

Vitusevich, S. A.
2005

16

Contribution to a book
Contribution to a conference proceedings

Improved Performance of 4H-SiC MESFETs under Small Doses of Gamma Radiation Treatment

Vitusevich, S. A.
2005

17

Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates

Danilchenko, B. A.
2005

18

Low-frequency noise in AlGaN/GaN HEMT structures with AlN thin film layer

Vitusevich, S. A.
2005

19

Radiation hardness of gate metalization Au-ZrB2 AlGaN/GaN HEMT structures

Vitusevich, S. A.
2005

20

Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes

Kurakin, A. M.
2005

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