JuLib | Articles & more

1

Journal Article

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

2

Journal Article

Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH

Holländer, B.
2010

Journal of the Electrochemical Society, 157 (2010) S. H643 - H646

3

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

Get full text OpenAccess OpenAccess

4

Journal Article

Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates

Buca, B.
2009

Applied physics letters, 95 (2009) S. 144103

Get full text OpenAccess OpenAccess

5

Journal Article

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

Minamisawa, R. A.
2009

Applied physics letters, 95 (2009) S. 034102

Get full text OpenAccess OpenAccess

6

Journal Article

Integration of \"GexSe1-x\" in crossbar arrays for non-volatile memory applications

Soni, R.
2009

Microelectronic engineering, 86 (2009) S. 1054 - 1056

7

Journal Article

Addition of yttrium into HfO2 films: Microstructure and electrical properties

Dubourdieu, C.
2009

Journal of vacuum science & technology / A, 27 (2009) S. 503 - 514

8

Journal Article

High temperature antimony ion implantation in strained silicon-on-insulator

Buca, D.
2009

Solid state electronics, 53 (2009) S. 828 - 832

9

Journal Article

Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures

Buca, D.
2009

Journal of applied physics, 105 (2009) S. 114905

Get full text OpenAccess OpenAccess

10

Journal Article

SmScO3 thin films as an alternative gate dielectric

Durgun Özben, E.
2008

Applied physics letters, 93 (2008) S. 052902-1 - 052902-3

Get full text OpenAccess OpenAccess

11

Journal Article

Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers

Buca, D.
2007

Applied physics letters, 90 (2007) S. 032108

Get full text OpenAccess OpenAccess

12

Journal Article

Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique

Khan, A. R.
2007

Semiconductor science and technology, 22 (2007) S. s212 - s215

Narrow Search Results