JuLib | Articles & more - {"Electrons."}

1

Journal Article

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

2

Journal Article

Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect

Bringer, A.
2011

Physical Review B Physical review / B, 83 83 (2011 2011) 11 11, S. 115305 115305

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3

Journal Article

CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique

Sedghi, N.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01AB03

4

Journal Article

Titania-assisted electron-beam and synchrotron lithography

Skorb, E.V.
2010

Nanotechnology, 21 (2010) S. 315301

5

Journal Article

Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction

Ruh, E.
2010

Ultramicroscopy, 110 (2010) S. 1255 - 1266

6

Journal Article

Universal conductance fluctuations and localization effects in InN nanowires connected in parallel

Alagha, S.
2010

Journal of applied physics, 108 (2010) S. 113704

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7

Journal Article

Self-Organized Si-Nanotransistors

Reiche, M.
2010

Japanese journal of applied physics, 49 (2010) S. 04DJ02

8

Journal Article

Spin-orbit coupling and phase coherence in InAs nanowires

Estévez Hernández, S.
2010

Physical Review B Physical review / B, 82 82 (2010 2010) 23 23, S. 235303 235303

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9

Journal Article

Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24

Zurbuchen, M.A.
2010

Journal of applied physics, 107 (2010) S. 024106

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10

Poster

Transport through few-layer graphene nanoribbons

Dauber, J.
2010

11

Journal Article

A strong ferroelectric ferromagnet created by means of spin-lattice coupling

Lee, J.H.
2010

Nature , 466 (2010) S. 954 - 958

“...MeSH Microscopy, Electron, Scanning Transmission...”

12

Poster

Towards bended edge graphene nanostructures

Terrés, B.
2010

13

Poster

Fabrication of Graphene-Nanotube Hybrid Devices

Engels, S.
2010

14

Journal Article

RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um

Kordos, P.
2010

IEEE Electron Device Letters, 31 (2010) S. 180 - 182

15

Journal Article

Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases

Akabori, M.
2010

Physica / E, 42 (2010) S. 1130 - 1133

16

Journal Article

Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP

Cheng, X.
2010

Applied physics letters, 96 (2010) S. 022904

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17

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

18

Journal Article

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Habicht, S.
2010

Nanotechnology, 21 (2010) S. 105701

“...MeSH Microscopy, Electron, Scanning...”

19

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

20

Journal Article

Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Knoll, L.
2010

IEEE Electron Device Letters, 31 (2010) S. 350 - 352

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