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1

Journal Article

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S.
2013

Applied physics letters, 102 19, S. 192103 -

“...2013...”
OpenAccess

2

Conference Presentation

Epitaxial growth studies of SiGe and SiGeSn

Wirths, S.
2013

“...2013...”

3

Conference Presentation

Growth of graded doped Si/SiGe Heterostructure Tunnel FET

Wirths, S.
2013

“...2013...”

4

Contribution to a book

Epitaxial Growth of Ge1-xSnx by REduced Pressure CVD Using SnC14 and Ge2H6

Wirths, Stephan
2013

“...2013...”

5

Journal Article

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Reuters, Benjamin
2013

Journal of electronic materials, 42 (2013) 5, S. 826 - 832

“...2013...”

6

Journal Article

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

Zhang, B.
2013

Nuclear instruments & methods in physics research / B, 307 (2013) S. 408 - 411

“...2013...”

7

Journal Article

AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

Witte, W
2013

Semiconductor science and technology, 28 (2013) 8, S. 085006 -

“...2013...”

8

Journal Article

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Hahn, Herwig
2013

IEEE transactions on electron devices, 60 (2013) 10, S. 3005 - 3011

“...2013...”

9

Journal Article

Tensely strained GeSn alloys as optical gain media

Wirths, S.
2013

Applied physics letters, 103 (2013) 19, S. 192110 -

“...2013...”
OpenAccess

10

Journal Article

Epitaxial growth of europium monoxide on diamond

Melville, A.
2013

Applied physics letters, 103 (2013) 22, S. 222402 -

“...2013...”
OpenAccess

11

Journal Article

Effect of film thickness and biaxial strain on the curie temperature of EuO

Melville, A.
2013

Applied physics letters, 102 (2013) 6, S. 062404 -

“...2013...”
OpenAccess Published under German "Allianz" Licensing conditions on 2013-02-11. Available in OpenAccess from 2013-02-11

12

Journal Article

Reduced Pressure CVD Growth of Ge and Ge1-xSnx Alloys

Wirths, S.
2013

ECS journal of solid state science and technology, 2 (2013) 5, S. N99 - N102

“...2013...”

13

Journal Article

Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

Luong, Gia Vinh
2013

Journal of applied physics, 113 (2013) 20, S. 204902

“...2013...”
OpenAccess

14

Journal Article

Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Wirths, Stephan
2013

Solid state electronics, 83 S. 2 - 9

“...2013...”

15

Journal Article

Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface

Nichau, Alexander
2013

The @journal of chemical physics, 138 (2013) 15, S. 154709

“...2013...”
OpenAccess

16

Journal Article

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Liu, Linjie
2013

Applied physics letters, 103 (2013) 23, S. 231909 -

“...2013...”
OpenAccess

17

Contribution to a book
Contribution to a conference proceedings

Growth and Exploitation of Strained Ge/(Si)GeSn Heterostructures for Optical, Electrical and Thermoelectric Applications

Wirths, Stephan
2013

“...2013...”

18

Conference Presentation

SiGeSn Growth Studies using Reduced Pressure CVD Towards Optoelectronic Applications

Wirths, Stephan
2013

“...2013...”
Get full text OpenAccess

19

Journal Article

Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn

Oehme, M.
2013

Journal of crystal growth, 384 (2013) S. 71 - 76

“...2013...”

20

Conference Presentation

Growth and Exploitation of Strained Ge/(Si)GeSn Heterostructures for Optical, Electrical and Thermoelectric Applications

Wirths, Stephan
2013

“...2013...”
OpenAccess

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