JuLib | Articles & more - {2013}

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1

Contribution to a book

Epitaxial Growth of Ge1-xSnx by REduced Pressure CVD Using SnC14 and Ge2H6

Wirths, Stephan
2013

“...2013...”

2

Journal Article

Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si

Nichau, Alexander
2013

Microelectronic engineering, 109 S. 109 - 112

“...2013...”

3

Journal Article

Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface

Nichau, Alexander
2013

The @journal of chemical physics, 138 (2013) 15, S. 154709

“...2013...”
OpenAccess

4

Conference Presentation

Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling

Knoll, Lars
2013

“...2013...”

5

Contribution to a book
Contribution to a conference proceedings

Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling

Knoll, Lars
2013

“...2013...”

6

Journal Article

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Liu, Linjie
2013

Applied physics letters, 103 (2013) 23, S. 231909 -

“...2013...”
OpenAccess

7

Talk (non-conference)

Strain engineered Ge based materials for optoelectronics

Buca, Dan Mihai
2013

“...2013...”

8

Conference Presentation

Growth and Exploitation of Strained Ge/(Si)GeSn Heterostructures for Optical, Electrical and Thermoelectric Applications

Wirths, Stephan
2013

“...2013...”
OpenAccess

9

Contribution to a book
Contribution to a conference proceedings

Growth and Exploitation of Strained Ge/(Si)GeSn Heterostructures for Optical, Electrical and Thermoelectric Applications

Wirths, Stephan
2013

“...2013...”

10

Conference Presentation

SiGeSn Growth Studies using Reduced Pressure CVD Towards Optoelectronic Applications

Wirths, Stephan
2013

“...2013...”
Get full text OpenAccess

11

Journal Article

Tensely strained GeSn alloys as optical gain media

Wirths, S.
2013

Applied physics letters, 103 (2013) 19, S. 192110 -

“...2013...”
OpenAccess

12

Journal Article

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

Zhang, B.
2013

Nuclear instruments & methods in physics research / B, 307 (2013) S. 408 - 411

“...2013...”

13

Conference Presentation

Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si

Nichau, Alexander
2013

“...2013...”

14

Journal Article

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S.
2013

Applied physics letters, 102 19, S. 192103 -

“...2013...”
OpenAccess

15

Investigations of channel direction influence on the effective hole mobility of SOI(110) and highly compressively strained Si0.5Ge0.5/SOI(100) p-MOSFETs

Hagedorn, M.
2013

“...2013...”

16

Conference Presentation

SiGeSn epitaxial layers on Ge virtual substrates: Raman scattering and ellipsometry studies

Stoica, T.
2013

“...2013...”

17

Conference Presentation

Epitaxial growth studies of SiGe and SiGeSn

Wirths, S.
2013

“...2013...”

18

Conference Presentation

Growth of graded doped Si/SiGe Heterostructure Tunnel FET

Wirths, S.
2013

“...2013...”

19

Conference Presentation

Complementary Strained Si nanowire TFETs and Inverters

Zhao, Qing-Tai
2013

“...2013...”

20

Conference Presentation

Strained Si nanowire TFETs and Inverters

Zhao, Qing-Tai
2013

“...2013...”

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