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1

Journal Article

Material and device issues of low-temperature GaAs for THz photomixers

Mikulics, V. V.
2001

Physik mikrostrukturierter Halbleiter, 23 (2001) S. 31

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2

Journal Article

Optical properties of semiconducting Ru2Si3

Shaposhnikov, V. I.
2001

Optical materials, 17 (2001) S. 339 - 341

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3

Journal Article

Optical properties of beta-FeSi2 precipitate layers in silicon

Schuller, B.
2001

Optical materials, 17 (2001) S. 121 - 124

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4

Journal Article

Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation

Schuller, B.
2001

Microelectronic engineering, 55 (2001) S. 219 - 225

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5

Journal Article

Study of structure and optical properties of beta-FeSi2 precipitates formed by ion-implantation of Fe+ in Si (100) and effect of co-implantation of Fe+ and Si+ in amorphous SiO2

Oyoshi, A. N.
2001

Thin solid films, 381 (2001) S. 194 - 201

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6

Journal Article

Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties

Oyoshi, A. N.
2001

Thin solid films, 381 (2001) S. 202 - 208

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7

Journal Article

Ion-selective light-adressable potentiometric sensor (LAPS) with chalcogenide thin film by pulsed laser deposition

Mourzina, Y. G.
2001

Sensors and actuators / B, 80 (2001) S. 136

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8

Journal Article

Development of multisensor systems based on chalcogenide thin film chemical sensors for the simultaneous multicomponent analysis of metal ions in complex solutions

Mourzina, Y. G.
2001

Electrochimica acta, 47 (2001) S. 251

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9

Journal Article

Copper, cadmium and thallium thin film sensors based on chalcogenide glasses

Mourzina, Y. G.
2001

Analytica chimica acta, 433 (2001) S. 103

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10

Journal Article

AlGaN/GaN varactor diode for integration in HEMT circuits

Marso, M.
2001

Electronics letters, 37 (2001) S. 1478

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11

Journal Article

Fabrication of laterally displaced porous silicon filters

Marso, M.
2001

Thin solid films, 382 (2001) S. 218

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12

Journal Article

AlGaN/GaN HEMT optimization using the RoundHEMT technology

Marso, M.
2001

Physica status solidi / A, 188 (2001) S. 199

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13

Journal Article

Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor

Loo, R.
2001

Journal of applied physics, 90 (2001) S. 2565

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OpenAccess

14

Journal Article

Structural investigation of the epitaxial yttria-stabilized zirconia films deposited on (001) silicon by laser ablation

Lei, C. H.
2001

Journal of crystal growth, 222 (2001) S. 558

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15

Journal Article

Growth kinetic of MgO on r-plane of sapphire : microstructural study

Lei, C. H.
2001

Journal of crystal growth, 226 (2001) S. 419

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16

Journal Article

Technology and performance of 150 nm gate lenghth InGaP/InGaAs HEMT

Lalinsky, T.
2001

Vacuum, 61 (2001) S. 323

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17

Journal Article

InGaAs/InGaP HEMTs : technological optimization and analytical modeling

Kuzmik, J.
2001

Vacuum, 61 (2001) S. 333

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18

Journal Article

Multiplexed SQUID array for non-destructive evaluation of aircraft structures

Krause, H.-J.
2001

IEEE transactions on applied superconductivity, 11 (2001) S. 1168

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OpenAccess

19

Journal Article

Control of Aharonov-Bohm oscillators in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing

Krafft, B.
2001

Physica / E, 9 (2001) S. 635

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20

Journal Article

Fabrication of epitaxial CoSi2-nanowires

Kluth, P.
2001

Applied physics letters, 79 (2001) S. 824

“...2001...”
OpenAccess

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