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1

Journal Article

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Si-Substraten

Kalisch, H.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 220

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2

Journal Article

Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch

Zheng, X.
2003

Applied optics, 42 (2003) S. 1726 - 1731

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3

Journal Article

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

Physica status solidi / A, 200 (2003) S. 179 - 182

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4

Journal Article

Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

Trellenkamp, S.
2003

Microelectronic engineering, 67-68 (2003) S. 376 - 380

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5

Journal Article

High Speed Photoconductive Switch based on Low-Temperature GaAs Transferred on Si Substrate

Mikulics, V. V.
2003

IEEE photonics technology letters, 15 (2003) S. 528 - 530

“...2003...”
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6

Journal Article

Electro-optic sampling system with a single-crystal 4-N,N-dimethylamino-4′-N′- methyl-4-stilbazolium tosylate sensor

Zheng, X.
2003

Applied physics letters, 76 (2003) S. 2383 - 2385

“...2003...”
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7

Journal Article

Patterning of 25nm wide Silicon Ridges for vertical Double-Gate MOSFETs

Trellenkamp, S.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 5

“...2003...”

8

Journal Article

Influence of SiO2 and Si3N4 Passivation on AlGaN/GaN/Si HEMT Performance

Javorka, P.
2003

Electronics letters, 39 (2003) S. 1155

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9

Journal Article

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Bernát, J.
2003

Solid state electronics, 47 (2003) S. 2097 - 2103

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10

Journal Article

Investigation of traps in AlGaN/GaN HEMTs on silicon substrate

Wolter, M.
2003

Physica status solidi / C (2003) S. 2360 - 2363

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11

Journal Article

Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Marso, M.
2003

Applied physics letters, 82 (2003) S. 633 - 635

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12

Journal Article

Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation

Bernát, J.
2003

Applied physics letters, 83 (2003) S. 5455

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