JuLib | Articles & more - {"Halbleiter-Nanoelektronik; IBN-1"}

1

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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2

Journal Article

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Lopes, J. M. J.
2009

Microelectronic engineering, 86 (2009)

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3

Journal Article

Formation of GaN nanodots on Si (111) by droplet nitridation

Debnath, R. K.
2009

Journal of crystal growth, 311 (2009) S. 3389 - 3394

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4

Journal Article

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics

Lopes, J. M. J.
2009

Applied physics / A, 96 (2009) S. 447 - 451

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5

Journal Article

Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric

Roeckerath, M.
2008

Thin solid films, 517 (2008) S. 201 - 203

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

6

Journal Article

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath, F.
2008

Journal of applied physics, 104 (2008) S. 044908

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7

Journal Article

Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate films prepared by molecular beam deposition

Lopes, J. M. J.
2007

Journal of applied physics, 101 (2007) S. 104109-1 - 104109

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”
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8

Journal Article

Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

Zhao, Q. T.
2007

Journal of applied physics, 102 (2007) S. 023522-1 - 023522-4

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9

Journal Article

The growth of Cr-doped GaN by MOVPE towards spintronic applications

Cho, Y. S.
2007

Physica status solidi / A, 204 (2007) S. 72 - 77

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