JuLib | Articles & more - {"Halbleiter-Nanoelektronik; IBN-1"}

21

Journal Article

Simultaneous detection of cyanide and heavy metals for environmental analysis by means of µISEs

Turek, M.
2010

Physica status solidi / A, 207 (2010) S. 817 - 823

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22

Journal Article

InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN

Mikulics, M.
2010

Applied physics letters, 97 (2010) S. 173505

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23

Journal Article

Universal conductance fluctuations and localization effects in InN nanowires connected in parallel

Alagha, S.
2010

Journal of applied physics, 108 (2010) S. 113704

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24

Journal Article

Charge Carrier Induced Increase of the Curie Temperature of EuO - Is there an Instrinsic Limit?

Mairoser, T.
2010

Physical review letters, 105 (2010) S. 257206

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25

Journal Article

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Roeckerath, M.
2010

Applied physics letters, 96 (2010) S. 013513

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26

Journal Article

Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings

Radtke, C.
2010

Electrochemical and solid-state letters, 13 (2010) S. G37 - G39

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27

Journal Article

Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances

Amekura, H.
2010

Applied physics letters, 96 (2010) S. 023110

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28

Journal Article

Molecular properties of liquid crystals in the terahertz frequency range

Vieweg, N.
2010

Optics express, 18 (2010) S. 6097 - 6107

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29

Journal Article

Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24

Zurbuchen, M.A.
2010

Journal of applied physics, 107 (2010) S. 024106

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30

Journal Article

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

Moers, J.
2010

Thin solid films, 518 (2010) S. 2565 - 2568

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31

Journal Article

Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

Gregusova, D.
2010

Japanese journal of applied physics, 49 (2010) S. 046504

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32

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

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33

Journal Article

Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP

Cheng, X.
2010

Applied physics letters, 96 (2010) S. 022904

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34

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

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35

Journal Article

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Habicht, S.
2010

Nanotechnology, 21 (2010) S. 105701

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36

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

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37

Journal Article

Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Knoll, L.
2010

IEEE Electron Device Letters, 31 (2010) S. 350 - 352

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38

Journal Article

Spin-orbit coupling and phase coherence in InAs nanowires

Estévez Hernández, S.
2010

Physical Review B Physical review / B, 82 82 (2010 2010) 23 23, S. 235303 235303

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39

Journal Article

A strong ferroelectric ferromagnet created by means of spin-lattice coupling

Lee, J.H.
2010

Nature , 466 (2010) S. 954 - 958

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40

Journal Article

Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric

Volk, C.
2010

Applied physics / A, 100 (2010) S. 305 - 308

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