JuLib | Articles & more - {"Minamisawa, R. A."}

1

Journal Article

Impact of strain and Ge concentration on the performance pf planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2012

Solid state electronics, 71 (2012) S. 42 - 47

“...Minamisawa, R.A....”

2

Journal Article

Hole Transport in Strained Si0.5Ge0.5 QW-MOSFETs with <110> and <100> Channel Orientations

Minamisawa, R.A.
2012

IEEE electron device letters, 33 (2012) S. 1105 - 1107

“...Minamisawa, R.A....”

3

Journal Article

Unipolar behavior of asymmetrically doped strained Si 0.5Ge 0.5 tunneling field-effect transistors

Schmidt, Matthias
2012

Applied physics letters, 101 (2012) 12, S. 123501

“...Minamisawa, R. A....”
Published under German "Allianz" Licensing conditions on 2012-09-17. Available in OpenAccess from 2012-09-17

4

Journal Article

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus, H.
2012

Journal of applied physics, 111 (2012) S. 014904

“...Minamisawa, R.A....”
Get full text Published under German "Allianz" Licensing conditions on 2012-01-05. Available in OpenAccess from 2012-01-05

5

Journal Article

p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures

Minamisawa, R.A.
2012

Journal of the Electrochemical Society, 159 (2012) S. H44 - H51

“...Minamisawa, R.A....”

6

Journal Article

High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack

Minamisawa, R.A.
2011

Microelectronic engineering, 88 (2011) S. 2955 - 2958

“...Minamisawa, R.A....”

7

Journal Article

Study of Arsenic ion implantation of patterned strained Si NWs

Minamisawa, R. A.
2011

Solid state electronics, 60 (2011) S. 31 - 36

“...Minamisawa, R. A....”

8

Journal Article

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Smith, J.T.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 1822 - 1829

“...Minamisawa, R.A....”

9

Journal Article

Elastic strain and dopant activation in ion implanted strained Si nanowires

Minamisawa, R.A.
2010

Journal of applied physics, 108 (2010) S. 124908

“...Minamisawa, R.A....”
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10

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

“...Minamisawa, R. A....”
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11

Journal Article

Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures

Buca, D.
2009

Journal of applied physics, 105 (2009) S. 114905

“...Minamisawa, R. A....”
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12

Journal Article

Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates

Buca, B.
2009

Applied physics letters, 95 (2009) S. 144103

“...Minamisawa, R. A....”
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13

Journal Article

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

Minamisawa, R. A.
2009

Applied physics letters, 95 (2009) S. 034102

“...Minamisawa, R. A....”
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