JuLib | Articles & more

Switching Dynamics, Limiting, Processes and Parasitic Effects in Resistive Switching Devices based on the Valence Change Mechanism

Menzel, Stephan
2017

“...2018...”

143

Mechanism for threshold siwtching in NbOx

Funck, Carsten
2017

“...2018...”

144

Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO 2

Starschich, S.
2017

Journal of applied physics, 121 (2017) 15, S. 154102 -

“...2018...”
Published on 2017-04-21. Available in OpenAccess from 2018-04-21. Published on 2017-04-21. Available in OpenAccess from 2018-04-21.

145

Comprehensive modeling of electrochemical metallization memory cells

Menzel, Stephan
2017

Journal of computational electronics, 16 (2017) 4, S. 1017 - 1037

“...2018...”

146

Donor-doped SrTiO3 as a model oxide - fundamental redox processes and functionalities

Waser, R.
2017

“...2018...”

147

Uncovering switching and failure mechanisms in memristive devices by in-operando spectromicroscopy

Dittmann, Regina
2017

“...2018...”

148

Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content

Fischer, Inga A
2017

Semiconductor science and technology, 32 (2017) 12, S. 124004 -

“...2018...”

149

Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors

Glass, S.
2017

Applied physics letters, 111 (2017) 26, S. 263504 -

“...2018...”
Published on 2017-12-27. Available in OpenAccess from 2018-12-27.

150

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

Schulte-Braucks, Christian
2017

IEEE transactions on electron devices, 64 (2017) 10, S. 4354 - 4362

“...2018...”

151

Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors

Mukherjee, Santanu
2017

Physical Review B Physical review / B, 95 95 (2017 2017) 16 16, S. 161402 161402

“...2018...”
OpenAccess

152

Abstract

Confinement of charge carriers in GeSn/SiGeSn heterostructures

Rainko, Denis
2017

“...2018...”
OpenAccess OpenAccess

153

Growth and Optical Properties of Direct Band Gap Ge/Ge 0.87 Sn 0.13 Core/Shell Nanowire Arrays

Assali, S.
2017

Nano letters, 17 (2017) 3, S. 1538 - 1544

“...2018...”

154

Abstract

Thermal stability and Sn diffusion in GeSn heterostructures

Rainko, Denis
2017

“...2018...”
OpenAccess OpenAccess

155

Epitaxy of direct bandgap group IV heterostructure lasers

von den Driesch, Nils
2017

“...2018...”

156

Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures

Stange, D.
2017

“...2018...”

157

Quantum confinement effects in GeSn/SiGeSn heterostructure lasers

Stange, D.
2017

“...2018...”

158

Static noise margin analysis of 8T TFET SRAM cells using a 2D compact model adapted to measurement data of fabricated TFET devices

Horst, Fabian
2017

“...2018...”

159

Experimental Investigation of ${C}$ – ${V}$ Characteristics of Si Tunnel FETs

Liu, Chang
2017

IEEE electron device letters, 38 (2017) 6, S. 818 - 821

“...2018...”

160