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AlGaN/GaN-heterostructures for HEMT application : some aspects for improvement

Lüth, H.
2002

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Semiconductor nano-devices

Lüth, H.
2002

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Nanostrukturierung von Halbleiterbauelementen

Lüth, H.
2002

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AlGaN/GaN-HEMTs on silicon substrates

Lüth, H.
2002

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Ion implantation of rare earth ions for light emitters

Buchal, C.
2002

Nuclear instruments & methods in physics research / B, 190 (2002) S. 40 - 46

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Recent studies on AlGaN/GaN-heterostructures for HEMT application

Lüth, H.
2002

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Research in the Jülich Center of Nanoelectronics and Information Technology

Lüth, H.
2002

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Gruppe III-Nitride-basierende Spinelektronik

Calarco, R.
2002

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Neuartige Pufferschichten für HEMTs auf Silizium

Lüth, H.
2002

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Interaction effects in semiconductor quantum dot systems

Indlekofer, K. M.
2002

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Internal Report

WinGreen quantum transport simulation transport simulation program

Indlekofer, K. M.
2002

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Can Kondo-like behavior occur in open quantum dots?

Bird, J. P.
2002

Microelectronic engineering, 63 (2002) S. 277 - 286

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Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures

Indlekofer, K. M.
2002

Physica status solidi / B, 234 (2002) S. 769 - 772

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Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures

Indlekofer, K. M.
2002

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Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Silizium-Substraten

Dikme, Y.
2002

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Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates

Kalisch, H.
2002

Physica status solidi / A, 194 (2002) S. 464 - 467

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Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

Physica status solidi / C (2002) S. 82 - 85

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