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1

Contribution to a book

Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI

Durgun Özben, E.
2010

2

Talk (non-conference)

Very low Energy Devices: TUNNEL FETs

Mantl, S.
2010

3

Journal Article

Self-Organized Si-Nanotransistors

Reiche, M.
2010

Japanese journal of applied physics, 49 (2010) S. 04DJ02

4

Journal Article

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Roeckerath, M.
2010

Applied physics letters, 96 (2010) S. 013513

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5

Journal Article

Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings

Radtke, C.
2010

Electrochemical and solid-state letters, 13 (2010) S. G37 - G39

6

Conference Presentation

Amorphous ternary high-k oxides on Si and higher mobility substrates

Lopes, J. M. J.
2010

7

Strain and charge transport in ion implanted strained Si nanowires on insulator

Minamisawa, R. A.
2010

8

Journal Article

Elastic strain and dopant activation in ion implanted strained Si nanowires

Minamisawa, R.A.
2010

Journal of applied physics, 108 (2010) S. 124908

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9

Contribution to a book
Contribution to a conference proceedings

Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate

Yu, W.
2010

10

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

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11

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

12

Journal Article

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Habicht, S.
2010

Nanotechnology, 21 (2010) S. 105701

13

Journal Article

Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH

Holländer, B.
2010

Journal of the Electrochemical Society, 157 (2010) S. H643 - H646

14

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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15

Contribution to a book
Contribution to a conference proceedings

High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process

Durgun Özben, E.
2010

16

Contribution to a book
Contribution to a conference proceedings

Effective mass and I-V characterization of biaxially tensile strained SOI MOSFETs

Feste, S. F.
2010

17

Conference Presentation

Effective mass and I-V characterization of biaxial tensile strained SOI MOSFETs

Feste, S. F.
2010

18

Conference Presentation

Ternary high-k oxides on SiGe and Ge substrates

Lopes, J. M. J.
2010

19

Conference Presentation

MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack

Yu, W.
2010

20

Conference Presentation

High mobility Si-Ge channel and high-k materials for NanoMOSFETs

Zhao, Q. T.
2010

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