JuLib | Articles & more - {*}

Ask a Librarian

1

Conference Presentation

Effective mass and I-V characterization of biaxial tensile strained SOI MOSFETs

Feste, S. F.
2010

2

Contribution to a book
Contribution to a conference proceedings

Effective mass and I-V characterization of biaxially tensile strained SOI MOSFETs

Feste, S. F.
2010

3

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

Get full text OpenAccess OpenAccess

4

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

5

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

6

Journal Article

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Sandow, C.
2009

Solid state electronics, 53 (2009) S. 1126 - 1129

7

Journal Article

Silicon Nanowire FETs with Uniaxial Tensile Strain

Feste, S. F.
2009

Solid state electronics, 53 (2009) S. 1257 - 1262

8

Investigation of Arsenic dopant segregation layers for scaled Schottky-Barrier MOSFETs

Feste, S. F.
2009

9

Talk (non-conference)

Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI

Feste, S. F.
2009

10

Journal Article

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F.
2009

Applied physics letters, 95 (2009) S. 182101

Get full text OpenAccess OpenAccess

11

Contribution to a book
Contribution to a conference proceedings

Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration

Sandow, C.
2008

12

Journal Article

Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs

Zhang, M.
2008

IEEE Transactions on Electron Devices, 55 (2008) S. 858 - 865

13

Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration

Sandow, C.
2008

14

Journal Article

Fabrication of uniaxially strained silicon nanowires

Feste, S. F.
2008

Thin solid films, 517 (2008)

15

Journal Article

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath, F.
2008

Journal of applied physics, 104 (2008) S. 044908

Get full text OpenAccess OpenAccess

16

Journal Article

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs

Zhang, M.
2007

IEEE Electron Device Letters, 28 (2007) S. 223 - 225

17

Journal Article

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

Knoch, J.
2007

Solid state electronics, 51 (2007) S. 572 - 578

18

Journal Article

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

Knoch, J.
2007

Applied physics / A, 87 (2007) S. 351 - 357

19

Journal Article

Dopant segregation in SOI Schottky-barrier MOSFETs

Knoch, J.
2007

Microelectronic engineering, 84 (2007) S. 2563

20

Conference Presentation

Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI

Knoch, J.
2006

Select all titles on this page

1
2
Next
[2]