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141

Conference Presentation

Rare-earth based alternative gate dielectrics for future integration in MOSFETs

Lopes, J. M. J.
2009

142

Talk (non-conference)

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Roeckerath, M.
2009

143

Journal Article

NiSi2/Si interface chemistry and epitaxial growth mode

Mi, S.B.
2009

Acta materialia, 57 (2009) 1, S. 232 - 236

144

Journal Article

Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si(100) interface

Zhao, Q. T.
2009

Journal of materials research, 24 (2009) S. 135139

145

Journal Article

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Lopes, J. M. J.
2009

Microelectronic engineering, 86 (2009)

146

Journal Article

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

Roeckerath, M.
2009

Applied physics / A, 94 (2009) S. 521 - 524

147

Journal Article

Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates

Buca, B.
2009

Applied physics letters, 95 (2009) S. 144103

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148

Contribution to a book

Strained Silicon on Wafer Level by Wafer Bonding: Materials Processing, Strain Measurements and Strain Relaxation

Reiche, M.
2008

149

Journal Article

Fluence-dependent formation of Zn and ZnO nanoparticles by ion implantation and thermal oxidation: An attempt to control nanoparticle size

Amekura, H.
2008

Journal of applied physics, 104 (2008) S. 114309

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150

Sb doping and characterization of strained silicon on SiO2 by ion beam techniques

Holländer, B.
2008

151

Schottky Barrier Height Modulation by Arsenic Dopant Segregation

Urban, C.
2008

152

Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration

Sandow, C.
2008

153

Schottky Barrier Height Modulation by Dopant Segregation

Urban, C.
2008

154

Conference Presentation

Schottky Barrier Height Modulation of NiSi/Si Contacts by Dopant Segregation

Urban, C.
2008

155

Contribution to a book
Contribution to a conference proceedings

Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration

Sandow, C.
2008

156

Contribution to a book
Contribution to a conference proceedings

Schottky barrier height modulation by Arsenic Dopant segregation

Urban, C.
2008

157

Journal Article

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

Mueller, M.
2008

Materials science and engineering / C, 154-155 (2008) S. 168 - 171

158

Journal Article

Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs

Zhang, M.
2008

IEEE Transactions on Electron Devices, 55 (2008) S. 858 - 865

159

Journal Article

Photoconductivity of Hf-based binary metal oxides

Shamuilia, S.
2008

Microelectronic engineering, 85 (2008) S. 2400 - 2402

160

Journal Article

Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric

Roeckerath, M.
2008

Thin solid films, 517 (2008) S. 201 - 203

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