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1

Universal conductance fluctuations in a Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator nano-scaled Hall bar structure

Zimmermann, Erik
2023

Semiconductor science and technology, 38 (2023) 3, S. 035010 -

OpenAccess

2

Journal Article

Electric-field control of magnetism in iron oxide nanoparticle/BaTiO 3 film composites

Wang, L.-M.
2022

Materials express, 12 (2022) 4, S. 599 - 602

OpenAccess

3

Journal Article

Canonical approach to cation flux calibration in oxide molecular-beam epitaxy

Sun, Jiaxin
2022

Physical review materials, 6 (2022) 3, S. 033802

OpenAccess

4

Journal Article

Unexpected precipitates in conjunction with layer-by-layer growth in Mn-enriched La2/3Sr1/3MnO3 thin films

Steffen, Alexandra
2021

Thin solid films, 735 (2021) S. 138862 -

OpenAccess

5

Journal Article

Impact of growth kinetics on the interface morphology and magnetization in La 1/3 Sr 2/3 FeO 3 /La 2/3 Sr 1/3 MnO 3 heterostructures

Waschk, M.
2020

Journal of physics / Condensed matter Condensed matter, 32 (2020) 16, S. 165801 -

OpenAccess OpenAccess

6

Journal Article

Tuning the Co/Sr stoichiometry of SrCoO$_{2.5}$ thin films by RHEED assisted MBEgrowth

Schöffmann, P.
2020

Materials Research Express, 7 (2020) S. 116404

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7

Journal Article

Development of a Combined pH‐ and Redox‐Sensitive Bi‐Electrode Glass Thin‐Film Sensor

Iken, Heiko
2019

Physica status solidi / A Applied research A, 216 (2019) 12, S. 1900114

8

Journal Article

Optical and structural characterization of orthorhombic LaLuO3 using extreme ultraviolet reflectometry

Tryus, Maksym
2019

Thin solid films, 680 (2019) S. 94 - 101

9

Journal Article

Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX

Han, Qinghua
2019

Solid state electronics, 159 (2019) S. 71 - 76

10

Journal Article

Self-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy

Mei, Antonio B.
2019

APL materials, 7 (2019) 7, S. 071101 -

OpenAccess OpenAccess

11

Journal Article

Reversible Control of Physical Properties via an Oxygen-Vacancy-Driven Topotactic Transition in Epitaxial La 0.7 Sr 0.3 MnO 3− δ Thin Films

Cao, Lei
2019

Advanced materials, 31 (2019) 7, S. 1806183 -

12

Journal Article

Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents

Afanas'ev, V. V.
2019

Microelectronic engineering, 215 (2019) S. 110992 -

13

Journal Article

Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors531

Han, Qinghua
2018

IEEE transactions on electron devices, 65 (2018) 10, S. 4641 - 4645

14

Journal Article

Structural, magnetic, and transport properties of Fe 1− x Rh x /MgO(001) films grown by molecular-beam epitaxy

Mei, Antonio B.
2018

Applied physics letters, 113 (2018) 8, S. 082403 -

Published on 2018-08-22. Available in OpenAccess from 2019-08-22. Published on 2018-08-22. Available in OpenAccess from 2019-08-22.

15

Journal Article

Structural properties and anisotropic electronic transport in SrIrO3 films

Kleindienst, K. R.
2018

Physical Review B Physical review / B, 98 98 (2018 2018) 11 11, S. 115113 115113

OpenAccess OpenAccess

16

Journal Article

Signatures of interaction-induced helical gaps in nanowire quantum point contacts

Heedt, Sebastian
2017

Nature physics, 13 (2017) S. 563–567

17

Journal Article

Ferroelectricity in Lu doped HfO2 layers

Tromm, T. C. U.
2017

Applied physics letters, 111 (2017) 14, S. 142904 -

Published on 2017-10-03. Available in OpenAccess from 2018-10-03. Published on 2017-10-03. Available in OpenAccess from 2018-10-03.

18

Journal Article

The asymmetric band structure and electrical behavior of the GdScO 3 /GaN system

Iacopetti, S.
2017

Journal of applied physics, 121 (2017) 20, S. 205303 -

Published on 2017-05-31. Available in OpenAccess from 2018-05-31. Published on 2017-05-31. Available in OpenAccess from 2018-05-31.

19

Journal Article

Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening

Borghardt, Sven
2017

Physical review materials, 1 (2017) 5, S. 054001

OpenAccess OpenAccess

20

Journal Article

Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge$_{1−x}$ Sn$_{x}$ , Si$_{y}$ Ge$_{1−x-y}$ Sn$_{x}$ ) with Al$_{2}$ O$_{3}$

Afanas'ev, V. V.
2017

Microelectronic engineering, 178 (2017) S. 141 - 144

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