JuLib | Articles & more

1

Journal Article

Self-Organized Si-Nanotransistors

Reiche, M.
2010

Japanese journal of applied physics, 49 (2010) S. 04DJ02

2

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

3

Journal Article

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Habicht, S.
2010

Nanotechnology, 21 (2010) S. 105701

4

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

5

Journal Article

Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Knoll, L.
2010

IEEE Electron Device Letters, 31 (2010) S. 350 - 352

6

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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7

Journal Article

Silicon Nanowire FETs with Uniaxial Tensile Strain

Feste, S. F.
2009

Solid state electronics, 53 (2009) S. 1257 - 1262

8

Journal Article

NiSi2/Si interface chemistry and epitaxial growth mode

Mi, S.B.
2009

Acta materialia, 57 (2009) 1, S. 232 - 236

9

Journal Article

Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si(100) interface

Zhao, Q. T.
2009

Journal of materials research, 24 (2009) S. 135139

10

Journal Article

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Sandow, C.
2009

Solid state electronics, 53 (2009) S. 1126 - 1129

11

Journal Article

Characterization of gadolinium oxide film by pulse laser deposition

Cheng, X.
2009

Applied surface science, 256 (2009) S. 921 - 923

12

Journal Article

The properties of high-k gate dielectric films deposited on HRSOI

Cheng, X.
2009

Microelectronic engineering, 86 (2009) S. 2404 - 2407

13

Journal Article

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F.
2009

Applied physics letters, 95 (2009) S. 182101

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14

Journal Article

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

Mueller, M.
2008

Materials science and engineering / C, 154-155 (2008) S. 168 - 171

15

Journal Article

Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

Zhao, Q. T.
2007

Journal of applied physics, 102 (2007) S. 023522-1 - 023522-4

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16

Journal Article

Roughness improvement of the CoSi2/Si interface for an application as buried silicide

Zimmermann, S.
2007

Microelectronic engineering, 84 (2007) S. 2537

17

Journal Article

Tailoring of epitaxial CoSi2/Si nanostructures by low temperature wet oxidation

Kluth, P.
2005

Nanotechnology, 16 (2005) S. 2718 - 2720

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