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1

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

“...Hartmann, J.M....”
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2

Contribution to a book
Contribution to a conference proceedings

Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate

Yu, W.
2010

“...Hartmann, J.-M....”

3

Conference Presentation

Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate

Yu, W.
2010

“...Hartmann, J.M....”

4

Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)

Holländer, B.
2010

“...Hartmann, J.-M....”

5

Journal Article

Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH

Holländer, B.
2010

Journal of the Electrochemical Society, 157 (2010) S. H643 - H646

“...Hartmann, J.M....”

6

Conference Presentation

Ternary high-k oxides on SiGe and Ge substrates

Lopes, J. M. J.
2010

“...Hartmann, J.M....”

7

Conference Presentation

MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack

Yu, W.
2010

“...Hartmann, J.M....”

8

Conference Presentation

High mobility Si-Ge channel and high-k materials for NanoMOSFETs

Zhao, Q. T.
2010

“...Hartmann, J.M....”

9

Conference Presentation

High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

“...Hartmann, J.M....”

10

Conference Presentation

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...Hartmann, J.M....”

11

Contribution to a book
Contribution to a conference proceedings

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...Hartmann, J.M....”

12

Contribution to a book
Contribution to a conference proceedings

MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack

Yu, W.
2010

“...Hartmann, J.M....”

13

Contribution to a book
Contribution to a conference proceedings

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...Hartmann, J.M....”

14

Contribution to a book
Contribution to a conference proceedings

Highmobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

“...Hartmann, J.M....”

15

Conference Presentation

Uniaxial strain relaxation in He-implanted (110) oriented SiGe layers

Buca, D.
2009

“...Hartmann, J.M....”

16

Contribution to a book

Flash Lamp Activation of n- and p-type dopants in strained and unstrained SOI and HOI

Minamisawa, R. A.
2009

“...Hartmann, J.M....”

17

Flask Lamp Activation of n- and p-type dopants in strained and unstrained SOI and SGOI

Minamisawa, R. A.
2009

“...Hartmann, J.M....”

18

Journal Article

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

Minamisawa, R. A.
2009

Applied physics letters, 95 (2009) S. 034102

“...Hartmann, J.M....”
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19

Journal Article

Magnetotransport and photoluminescence of two-dimensional hole gases in Si/Sil -, Ge, /Si heterostructures

Stoica, T.

Physical review / B, 50 (1994) 24, S. 18113 - 18123

“...Hartmann, A....”
OpenAccess

20

Journal Article

Line-shape model for the broad photoluminescence band from Si1-xGex/Si heterostructures

Lüth, H.

Physical review / B, 48 (1993) 24, S. 18276 - 18279

“...Hartmann, A....”
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