JuLib | Articles & more

1

Conference Presentation

Nanoscale analysis of forming and resistive switching in Fe:STO thin film devices

Dittmann, R.
2012

2

Journal Article

Scaling Potential of Local Redox Processes in Memristive SrTiO _{3} Thin-Film Devices

Dittmann, R.
2012

Proceedings of the IEEE, 100 (2012) S. 1979 - 1990

3

Journal Article

Electrically Conducting Nanopatterns Formed by Chemical e-Beam Lithography via Gold Nanoparticle Seeds

Schaal, P.A.
2012

Langmuir, 28 (2012) S. 2448 - 2454

4

Journal Article

LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process

Nichau, A.
2012

Solid state electronics, 71 (2012) S. 19 - 24

5

Contribution to a book

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

Lopes, J.M.J.
2011

6

Journal Article

Electroforming and Resistance Switching Characteristics of Silver-Doped MSQ With Inert Electrodes

Rosezin, R.
2011

IEEE transactions on applied superconductivity, 10 (2011) S. 338 - 343

7

Journal Article

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Durgun Özben, E.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A903

8

Journal Article

Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process

Durgun Özben, E.
2011

IEEE Electron Device Letters, 32 (2011) S. 15 - 17

9

Contribution to a book
Contribution to a conference proceedings

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

10

Journal Article

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process

Durgun Özben, E.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622

11

Conference Presentation

Low temperature oxygen incorporation in single crystalline SrTiO3 facilitated by high density dislocations

Guo, X.
2011

12

Journal Article

TiO2-a prototypical memristive material

Szot, K.
2011

Nanotechnology, 22 (2011) S. 1 - 21

13

Contribution to a book

Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI

Durgun Özben, E.
2010

14

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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15

Talk (non-conference)

Rare-earth Scandate High-k Films for Future Ge CMOS Technologies

Lopes, J. M. J.
2009

16

Journal Article

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Lopes, J. M. J.
2009

Microelectronic engineering, 86 (2009)

17

Poster

Alternative ternary gate-dielectrics on germanium substrates

Schubert, J.
2009

18

Journal Article

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics

Lopes, J. M. J.
2009

Applied physics / A, 96 (2009) S. 447 - 451

19

Conference Presentation

Rare-earth based alternative gate dielectrics for future integration in MOSFETs

Lopes, J. M. J.
2009

20

Contribution to a book
Contribution to a conference proceedings

Rare-earth based alternative gate dielectrics for future integration in MOSFETs

Lopes, J. M. J.
2009

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