JuLib | Articles & more - {"Halbleiter-Nanoelektronik; IBN-1"}

1

Journal Article

Self-Organized Si-Nanotransistors

Reiche, M.
2010

Japanese journal of applied physics, 49 (2010) S. 04DJ02

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

2

Poster

Strain and charge transport in ion implanted strained Si nanowires on insulator

Minamisawa, R. A.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

3

Contribution to a book
Contribution to a conference proceedings

Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate

Yu, W.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

4

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”
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5

Journal Article

Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH

Holländer, B.
2010

Journal of the Electrochemical Society, 157 (2010) S. H643 - H646

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

6

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”
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7

Contribution to a book
Contribution to a conference proceedings

Effective mass and I-V characterization of biaxially tensile strained SOI MOSFETs

Feste, S. F.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

8

Conference Presentation

Effective mass and I-V characterization of biaxial tensile strained SOI MOSFETs

Feste, S. F.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

9

Conference Presentation

Ternary high-k oxides on SiGe and Ge substrates

Lopes, J. M. J.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

10

Conference Presentation

MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack

Yu, W.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

11

Conference Presentation

High mobility Si-Ge channel and high-k materials for NanoMOSFETs

Zhao, Q. T.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

12

Conference Presentation

High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

13

Conference Presentation

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

14

Contribution to a book
Contribution to a conference proceedings

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

15

Contribution to a book
Contribution to a conference proceedings

MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack

Yu, W.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

16

Contribution to a book
Contribution to a conference proceedings

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

17

Contribution to a book
Contribution to a conference proceedings

Highmobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

18

Talk (non-conference)

From Strained Si to strained Si on Insulator (SSOI)

Buca, D.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

19

Poster

Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)

Holländer, B.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

20

Conference Presentation

Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate

Yu, W.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

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