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61

Journal Article

MOVPE GaN Growth: Determination of Activation Energy using In-Situ Reflectometry

Kaluza, N.
2004

Journal of crystal growth, 272 (2004) S. 100 - 105

62

Journal Article

New concepts of miniaturised reference electrodes in silicon technology for potentiometric sensor systems

Simonis, A.
2004

Sensors and actuators / B, 103 (2004) S. 429 - 435

63

Journal Article

Carrier relaxation in GaAs v-groove quantum wires and the effects of localization

Cade, N. I.
2004

Physical Review B Physical review / B, 70 70 (2004 2004) 19 19, S. 195308 195308

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64

Journal Article

Optimierung eines neuen GaN MOVPE-Wachstumsprozesses mit reduzierten parasitären Depositionen

Steins, R.
2004

Verhandlungen der Deutschen Physikalischen Gesellschaft, 39 (2004) S. 204

65

Journal Article

Hot-electron transport in III-V nitride based two-dimensional gases

Vitusevich, S. A.
2003

Physica status solidi / C (2003) S. 2408 - 2411

66

Journal Article

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Si-Substraten

Kalisch, H.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 220

67

Journal Article

Strategies of miniaturised reference electrodes integrated in a silicon based 'one chip' pH sensor

Simonis, A.
2003

Sensors, 3 (2003) S. 330 - 339

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68

Journal Article

A long-term stable macroporous-type EIS structure for electrochemical sensor applications

Simonis, A.
2003

Sensors and actuators / B, 91 (2003) S. 21 - 25

69

Journal Article

Current-injection in a ballistic multiterminal superconductor/two-dimensional electron gas Josephson junction

Schäpers, T.
2003

Physical Review B Physical review / B, 67 67 (2003 2003) 1 1, S. 014522 014522

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70

Journal Article

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

Physica status solidi / A, 200 (2003) S. 179 - 182

71

Journal Article

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Bernát, J.
2003

Solid state electronics, 47 (2003) S. 2097 - 2103

72

Journal Article

Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

Trellenkamp, S.
2003

Microelectronic engineering, 67-68 (2003) S. 376 - 380

73

Journal Article

Investigation of traps in AlGaN/GaN HEMTs on silicon substrate

Wolter, M.
2003

Physica status solidi / C (2003) S. 2360 - 2363

74

Journal Article

Influence of SiO2 and Si3N4 Passivation on AlGaN/GaN/Si HEMT Performance

Javorka, P.
2003

Electronics letters, 39 (2003) S. 1155

75

Journal Article

Patterning of 25nm wide Silicon Ridges for vertical Double-Gate MOSFETs

Trellenkamp, S.
2003

Verhandlungen der Deutschen Physikalischen Gesellschaft, 38 (2003) S. 5

76

Journal Article

Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Marso, M.
2003

Applied physics letters, 82 (2003) S. 633 - 635

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77

Journal Article

Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures

Indlekofer, K. M.
2002

Physica status solidi / B, 234 (2002) S. 769 - 772

78

Journal Article

Surface potential at as grown GaN(0001) MBE layers

Kocan, M.
2002

Physica status solidi / B, 234 (2002) S. 773 - 777

79

Journal Article

Resonant-tunneling effect in a periodically modulated electrical field

Vitusevich, S.
2002

Physica / E, 13 (2002) S. 811

80

Journal Article

AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

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