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1

Conference Presentation

Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs

Heidelberger, G.
2005

2

Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

3

Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

4

Conference Presentation

An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

5

Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

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6

Journal Article

SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

Bernát, J.
2005

Electronics letters, 41 (2005) S. 667 - 668

7

Contribution to a book
Contribution to a conference proceedings

Generation of 1 THz radiation by photomixing in low-temperature-grown MBE GaAs

Mikulics, V. V.
2004

8

Contribution to a book
Contribution to a conference proceedings

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation

Bernát, J.
2004

9

Conference Presentation

Generation of 1 THz radiation by photomixing in low-temperature-grown MBE GaAs

Mikulics, V. V.
2004

10

Talk (non-conference)

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation

Bernát, J.
2004

11

Journal Article

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

Physica status solidi / A, 200 (2003) S. 179 - 182

12

Journal Article

Influence of SiO2 and Si3N4 Passivation on AlGaN/GaN/Si HEMT Performance

Javorka, P.
2003

Electronics letters, 39 (2003) S. 1155

13

Conference Presentation

Effect of Transistor Geometry on DC and RF Performance of AlGaN/GaN HEMTs on Silicon Substrate

Javorka, P.
2003

14

Journal Article

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Bernát, J.
2003

Solid state electronics, 47 (2003) S. 2097 - 2103

15

Conference Presentation

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

16

Journal Article

Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

Wolter, M.
2002

Journal of electronic materials, 31 (2002) S. 1321 - 1324

17

Conference Presentation

Wachstum und Charakterisierung von AlGaN/GaN HEMTs auf Silizium-Substraten

Dikme, Y.
2002

18

Journal Article

Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates

Kalisch, H.
2002

Physica status solidi / A, 194 (2002) S. 464 - 467

19

Journal Article

Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

Physica status solidi / C (2002) S. 82 - 85

20

Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

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