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21

Journal Article

The growth of Cr-doped GaN by MOVPE towards spintronic applications

Cho, Y. S.
2007

Physica status solidi / A, 204 (2007) S. 72 - 77

22

Journal Article

Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs

Mikulics, M.
2006

Applied physics letters, 89 (2006) S. 071103

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23

Journal Article

Fabrication and Characterisation of GaAs Gunn Diode Chips for Application at 77 Ghz in Automotive Instustry

Förster, A.
2006

Sensors, 6 (2006) S. 349 - 360

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24

Journal Article

Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers

Cámara Mayorga, I.
2006

Journal of applied physics, 100 (2006) S. 043116-1 - 043116-4

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25

Journal Article

The effect of carrier gas on GaN epilayer characteristics

Cho, Y. S.
2006

Physica status solidi / C, 3 (2006) S. 1408 - 1411

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26

Journal Article

Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs

Mikulics, M.
2006

Applied physics letters, 88 (2006) S. 041118

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27

Journal Article

Defect Distribution along Single GaN Nanowhiskers

Cavallini, A.
2006

Nano letters, 6 (2006) S. 1548 - 1551

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28

Journal Article

Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs

Marso, M.
2006

IEEE Transactions on Electron Devices, 53 (2006) S. 1517 - 1523

29

Journal Article

Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs

Mikulics, M.
2006

IEEE photonics technology letters, 18 (2006) S. 820 - 822

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30

Journal Article

Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes

Kurakin, A. M.
2006

Physica status solidi / C, 3 (2006) S. 2265 - 2269

31

Journal Article

Ultra-high field transport in GaN-based heterostructures

Vitusevich, S. A.
2006

Semiconductor physics, quantum electronics & optoelectronics, 9 (2006) S. 66 - 69

32

Journal Article

An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2006

Physica status solidi / C, 3 (2006) S. 2261 - 2264

33

Journal Article

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2006

Physica status solidi / A, 203 (2006) S. 1876 - 1881

34

Journal Article

Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors

Kordos, P.
2006

Semiconductor science and technology, 21 (2006) S. 67 - 71

35

Journal Article

The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

Thillosen, N.
2006

Nano letters, 6 (2006) S. 704 - 708

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36

Journal Article

Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3

Danilchenko, B. A.
2006

Physica status solidi / B, 243 (2006) S. 1529 - 1532

37

Journal Article

Ohmic contacts for GaAs based nanocolumns

Wensorra, J.
2006

Physica status solidi / A, 203 (2006) S. 3559 - 3564

38

Journal Article

Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

Stoica, T.
2006

Nano letters, 6 (2006) S. 1541 - 1547

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39

Journal Article

Surface enhanced Raman scattering by GaN nanocolumns

Milekhin, A. G.
2006

Physica status solidi / C, 3 (2006) S. 2065 - 2068

40

Journal Article

GaAs photodetectors prepared by high-energy and higt-dose nitrogen implantation

Mikulics, M.
2006

Applied physics letters, 89 (2006) S. 091103

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