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1

Journal Article

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus, H.
2012

Journal of applied physics, 111 (2012) S. 014904

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Get full text Published under German "Allianz" Licensing conditions on 2012-01-05. Available in OpenAccess from 2012-01-05

2

Journal Article

Laser synthesis of germanium tin alloys on virtual germanium

Stefanov, S.
2012

Applied physics letters, 100 (2012) S. 104101

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Get full text Published under German "Allianz" Licensing conditions on 2012-03-06. Available in OpenAccess from 2012-03-06

3

Journal Article

Zn nanoparticles irradiated with swift heavy ions at low fluences: Optically-detected shape elongation induced by nonoverlapping ion tracks

Amekura, H.
2011

Physical Review B Physical review / B, 83 83 (2011 2011) 20 20, S. 205401 205401

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4

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

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Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

5

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

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6

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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7

Journal Article

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Roeckerath, M.
2010

Applied physics letters, 96 (2010) S. 013513

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8

Journal Article

Elastic strain and dopant activation in ion implanted strained Si nanowires

Minamisawa, R.A.
2010

Journal of applied physics, 108 (2010) S. 124908

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9

Journal Article

Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances

Amekura, H.
2010

Applied physics letters, 96 (2010) S. 023110

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10

Journal Article

Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates

Buca, B.
2009

Applied physics letters, 95 (2009) S. 144103

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11

Journal Article

Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures

Buca, D.
2009

Journal of applied physics, 105 (2009) S. 114905

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12

Journal Article

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F.
2009

Applied physics letters, 95 (2009) S. 182101

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13

Journal Article

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

Minamisawa, R. A.
2009

Applied physics letters, 95 (2009) S. 034102

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14

Journal Article

Fluence-dependent formation of Zn and ZnO nanoparticles by ion implantation and thermal oxidation: An attempt to control nanoparticle size

Amekura, H.
2008

Journal of applied physics, 104 (2008) S. 114309

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15

Journal Article

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath, F.
2008

Journal of applied physics, 104 (2008) S. 044908

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16

Journal Article

Implantation-induced nonequilibrium reaction between Zn ions of 60 keV and SiO2 target

Amekura, H.
2007

Applied physics letters, 91 (2007) S. 063113-1

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17

Journal Article

Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers

Buca, D.
2007

Applied physics letters, 90 (2007) S. 032108

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18

Journal Article

Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate films prepared by molecular beam deposition

Lopes, J. M. J.
2007

Journal of applied physics, 101 (2007) S. 104109-1 - 104109

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19

Journal Article

Embedment of ZnO nanoparticles in SiO2 by ion implantation and low-temperature oxidation

Amekura, H.
2007

Applied physics letters, 90 (2007) S. 083102

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20

Journal Article

Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

Zhao, Q. T.
2007

Journal of applied physics, 102 (2007) S. 023522-1 - 023522-4

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