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61

Conference Presentation

Formation and Characterization of Ultra-Thin Ni Silicides on Strained and Unstrained Silicon

Zhao, Q. T.
2010

62

Talk (non-conference)

Very low Energy Devices: TUNNEL FETs

Mantl, S.
2010

63

Contribution to a book
Contribution to a conference proceedings

Noise properties of strained silicon nanowire field-effect transistors

Pud, S.
2010

64

Journal Article

Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH

Holländer, B.
2010

Journal of the Electrochemical Society, 157 (2010) S. H643 - H646

65

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

66

Journal Article

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Habicht, S.
2010

Nanotechnology, 21 (2010) S. 105701

67

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

68

Journal Article

Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Knoll, L.
2010

IEEE Electron Device Letters, 31 (2010) S. 350 - 352

69

Poster

Strain and charge transport in ion implanted strained Si nanowires on insulator

Minamisawa, R. A.
2010

70

Journal Article

Self-Organized Si-Nanotransistors

Reiche, M.
2010

Japanese journal of applied physics, 49 (2010) S. 04DJ02

71

Poster

Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)

Holländer, B.
2010

72

Journal Article

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Roeckerath, M.
2010

Applied physics letters, 96 (2010) S. 013513

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73

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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74

Contribution to a book
Contribution to a conference proceedings

Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate

Yu, W.
2010

75

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

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76

Journal Article

Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings

Radtke, C.
2010

Electrochemical and solid-state letters, 13 (2010) S. G37 - G39

77

Conference Presentation

Amorphous ternary high-k oxides on Si and higher mobility substrates

Lopes, J. M. J.
2010

78

Talk (non-conference)

Verspanntes Silizium, Nanowire- und Schottky- MOSFETs

Mantl, S.
2010

79

Conference Presentation

Effective mass and I-V characterization of biaxial tensile strained SOI MOSFETs

Feste, S. F.
2010

80

Contribution to a book
Contribution to a conference proceedings

Effective mass and I-V characterization of biaxially tensile strained SOI MOSFETs

Feste, S. F.
2010

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