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1

Journal Article

Coexistence of filamentary and homogeneous switching in Fe-doped SrTiO3 thin film memristive devices

Münstermann, R.
2010

Advanced materials, 22 (2010) S. 4819 - 4822

2

Journal Article

Morphological and electical changes in TiO2 memristive devices induced by elecroforming and switching

Münstermann, R.
2010

Physica status solidi / Rapid research letters, 4 (2010)

3

Journal Article

Soft x-ray resonant scattering study of single-crystal LaSr2Mn2O7

Li, H.-F.
2010

The @European physical journal / B, 74 (2010) S. 457 - 461

4

Journal Article

Complementary resistive switches for passive nanocrossbar memories Published online: 18 April 2010

Linn, E.
2010

Nature materials, 9 (2010) S. 403 - 406

5

Journal Article

Electronic Mapping of Molecular Orbitals at the Molecule-Metal Interface

Lennartz, M.C.
2010

Physical review letters, 105 (2010) S. 066801

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6

Journal Article

Electronic conduction mechanisms in BaTiO3-Ni composites with ultrafine microstructure

Yoon, S.
2010

Journal of the American Ceramic Society, 93 (2010) S. 4075 - 4080

7

Journal Article

The role of defects in resistively switching chalcogenides

Waser, R.
2010

International journal of materials research, 101 (2010) S. 182 - 198

8

Journal Article

Observation of unipolar resistance switching in silver doped methyl-silsesquioxane

Rosezin, R.
2010

Microelectronic engineering, 87 (2010)

9

Journal Article

Comments on the processing of the niobium omponent for chemical solution derived niobium oxide-based thin films

Roescher, M.
2010

Journal of sol gel science and technology, 56 (2010) S. 236 - 243

10

Journal Article

Evidence for triplet superconductivity in Josephson junctions with ferromagnetic Cu2MnAl-Heusler barriers

Sprungmann, D.
2010

Physical Review B Physical review / B, 82 82 (2010 2010) 6 6, S. 060505 060505

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11

Journal Article

Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer

Weides, M.
2010

Superconductor science and technology, 23 (2010) S. 095007

12

Journal Article

Study on the dynamic resistance switching properties of NiO thin films

Kügeler, C.
2010

Thin solid films, 518 (2010) S. 2258 - 2260

13

Journal Article

Visualizing supercurrents in ferromagnetic Josephson junctions with various arrangements of 0 and pi segments

Gürlich, C.
2010

Physical Review B Physical review / B, 81 81 (2010 2010) 9 9, S. 094502 094502

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14

Journal Article

Probing Cu doped Ge_0.3Se_0.7 based resistance switching memory devices with random telegraph noise

Soni, R.
2010

Journal of applied physics, 107 (2010) S. 024517 - 024527

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15

Journal Article

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

Schroeder, H.
2010

Journal of applied physics, 107 (2010) S. 054517

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16

Journal Article

SrTiO3 ultra thin film capacitors on silicon substrates with significant interfacial passive layers

Schmelzer, S.
2010

Applied physics letters, 97 (2010) S. 132907

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17

Journal Article

Josephson supercurrent in Nb/InN-nanowire/Nb junctions

Frielinghaus, R.
2010

Applied physics letters, 96 (2010) S. 132504

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18

Journal Article

Identification of A- and B-site cation vacancy defects in perovskite oxide thin films

Keeble, D.J.
2010

Physical review letters, 105 (2010) S. 226102

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19

Journal Article

Impact of defect distribution on resistive switching characteristics of Sr2tiO4 thin Films

Shibuya, K.
2010

Advanced materials, 22 (2010)

20

Journal Article

Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

Shen, Wan.
2010

Journal of applied physics, 107 (2010) S. 094506

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