JuLib | Articles & more - {"Steins, R."}

1

Journal Article

Investigation of AlN growth on sapphire substrates in a horizontal MOVPE reactor

Sofer, Z.
2007

Journal of physics and chemistry of solids, 68 (2007) S. 1131 - 1134

“...Steins, R....”

2

Journal Article

The growth mechanism of GaN with different H2/N2 carrier gas ratios

Cho, Y. S.
2007

Journal of crystal growth, 307 (2007) S. 6 - 13

“...Steins, R....”

3

Journal Article

New approaches for growth control of GaN-based HEMT structures

Hardtdegen, H.
2007

Applied physics / A, 87 (2007) S. 491 - 498

“...Steins, R....”

4

Contribution to a book
Contribution to a conference proceedings

Heidelberger, G.
2006

“...Steins, R....”

5

Journal Article

New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance

Hardtdegen, H.
2006

Physica status solidi / A, 203 (2006) S. 1645 - 1649

“...Steins, R....”

6

Journal Article

The effect of carrier gas on GaN epilayer characteristics

Cho, Y. S.
2006

Physica status solidi / C, 3 (2006) S. 1408 - 1411

“...Steins, R....”
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7

Journal Article

Observation of growth during the MOVPE of III-nitrides

Hardtdegen, H.
2006

Journal de physique / 4, 132 (2006) S. 177 - 183

“...Steins, R....”
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8

Poster

Improvement of buffer properties for HEMT application using N2 ambient in a horizontal MOVPE reactor with inverted gas inlet

Hardtdegen, H.
2006

“...Steins, R....”

9

Poster

Systematic study on the growth mechanism of GaN/sapphire epilayers grown with different H2 and N2 carrier gas

Cho, Y. S.
2006

“...Steins, R....”

10

Poster

New Approaches for Growth Control of GaN Based HEMT Structures

Hardtdegen, H.
2006

“...Steins, R....”

11

Poster

Influences of H2/N2 Carrier Gas Mixtures on the Characteristics of GaN Epilayers

Cho, Y. S.
2006

“...Steins, R....”

12

Talk (non-conference)

MOVPE von AlGaN/GaN/Saphir: Einfluss der Reaktorhardware

Kaluza, N.
2005

“...Steins, R....”

13

Talk (non-conference)

GaN epilayers grown with different H2/N2 carrier gas mixtures

Cho, Y. S.
2005

“...Steins, R....”

14

Conference Presentation

Observation of Growth during the MOVPE of III-Nitrides

Hardtdegen, H.
2005

“...Steins, R....”

15

Poster

New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance

Hardtdegen, H.
2005

“...Steins, R....”

16

Journal Article

Use of real time wafer temperature determination for the study of unintentional parameter influences in the MOVPE of nitrides

Hardtdegen, H.
2005

Physica status solidi / B, 242 (2005) S. 2581 - 2586

“...Steins, R....”

17

Poster

Influence of MOVPE growth parameters on surface temperature with respect to GaN deposition

Hardtdegen, H.
2005

“...Steins, R....”

18

Poster

Optimisation of GaN high temperature growth using N2 as carrier gas

Steins, R.
2005

“...Steins, R....”

19

Journal Article

Uniform III-nitride growth in single wafer horizontal MOVPE reactors

Hardtdegen, H.
2005

Physica status solidi / A, 202 (2005) S. 744 - 748

“...Steins, R....”

20

Poster

In-situ monitoring of parameters influencing temperature in MOVPE nitride growth

Kaluza, N.
2005

“...Steins, R....”

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