JuLib | Articles & more - {"Bernát, J."}

1

Journal Article

An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2006

Physica status solidi / C, 3 (2006) S. 2261 - 2264

“...Bernát, J....”

2

Journal Article

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2006

Physica status solidi / A, 203 (2006) S. 1876 - 1881

“...Bernát, J....”

3

Journal Article

Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs

Marso, M.
2006

IEEE Transactions on Electron Devices, 53 (2006) S. 1517 - 1523

“...Bernát, J....”

4

Dissertation / PhD Thesis

Fabrication and Characterisation of AlGaN/GaN High Electron Mobility Transistors for Power Applications

Bernát, J.
2005

“...Bernát, J....”

5

Conference Presentation

Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs

Heidelberger, G.
2005

“...Bernát, J....”

6

Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...Bernát, J....”

7

Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

“...Bernát, J....”

8

Conference Presentation

An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...Bernát, J....”

9

Journal Article

Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs

Bernát, J.
2005

Physica status solidi / C, 2 (2005) S. 2676 - 2679

“...Bernát, J....”

10

Journal Article

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

Gregusova, D.
2005

Physica status solidi / C, 2 (2005) S. 2619 - 2622

“...Bernát, J....”

11

Journal Article

Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors

Marso, M.
2005

Physica status solidi / C, 2 (2005) S. 2611 - 2614

“...Bernát, J....”

12

Journal Article

SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

Bernát, J.
2005

Electronics letters, 41 (2005) S. 667 - 668

“...Bernát, J....”

13

Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

“...Bernát, J....”
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14

Contribution to a book
Contribution to a conference proceedings

Influence of doping density on small- and large-signal characteristics of AlGaN/GaN/SiC HEMTs

Fox, P. T.
2004

“...Bernát, J....”

15

Contribution to a book
Contribution to a conference proceedings

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation

Bernát, J.
2004

“...Bernát, J....”

16

Conference Presentation

DC and Pulse Behaviour of Undoped and Doped GaN/AlGaN/GaN/SiC HEMTs

Bernát, J.
2004

“...Bernát, J....”

17

Conference Presentation

Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs

Bernát, J.
2004

“...Bernát, J....”

18

Journal Article

Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs

Bernát, J.
2004

Electronics letters, 40 (2004) S. 78 - 80

“...Bernát, J....”

19

Journal Article

Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress

Bernát, J.
2004

Solid state electronics, 48 (2004) S. 1825 - 1828

“...Bernát, J....”

20

Contribution to a book
Contribution to a conference proceedings

DC and Pulse Behaviour of Undoped and Doped GaN/AlGaN/GaN/SiC HEMTs

Bernát, J.
2004

“...Bernát, J....”

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