JuLib | Articles & more - {"Halbleiter-Nanoelektronik; IBN-1"}

1

Poster

Strain and charge transport in ion implanted strained Si nanowires on insulator

Minamisawa, R. A.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

2

Talk (non-conference)

From strained SOI layers to sSi NW: stress and electrical characterization

Minamisawa, R. A.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

3

Conference Presentation

Ternary high-k oxides on SiGe and Ge substrates

Lopes, J. M. J.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

4

Conference Presentation

High mobility Si-Ge channel and high-k materials for NanoMOSFETs

Zhao, Q. T.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

5

Conference Presentation

High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

6

Contribution to a book
Contribution to a conference proceedings

Highmobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

7

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”
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8

Poster

Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)

Holländer, B.
2010

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

9

Conference Presentation

Novel channel and dielectric materials for nanoelectronics

Feste, S. F.
2009

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

10

Journal Article

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

Minamisawa, R. A.
2009

Applied physics letters, 95 (2009) S. 034102

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”
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11

Contribution to a book

Flash Lamp Activation of n- and p-type dopants in strained and unstrained SOI and HOI

Minamisawa, R. A.
2009

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

12

Journal Article

Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates

Buca, B.
2009

Applied physics letters, 95 (2009) S. 144103

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13

Poster

Flask Lamp Activation of n- and p-type dopants in strained and unstrained SOI and SGOI

Minamisawa, R. A.
2009

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

14

Conference Presentation

Uniaxial strain relaxation in He-implanted (110) oriented SiGe layers

Buca, D.
2009

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

15

Journal Article

Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures

Buca, D.
2009

Journal of applied physics, 105 (2009) S. 114905

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”
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