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1

Journal Article

New approaches for growth control of GaN-based HEMT structures

Hardtdegen, H.
2007

Applied physics / A, 87 (2007) S. 491 - 498

“...Heidelberger, G....”

2

Journal Article

The growth mechanism of GaN with different H2/N2 carrier gas ratios

Cho, Y. S.
2007

Journal of crystal growth, 307 (2007) S. 6 - 13

“...Heidelberger, G....”

3

Systematic study on the growth mechanism of GaN/sapphire epilayers grown with different H2 and N2 carrier gas

Cho, Y. S.
2006

“...Heidelberger, G....”

4

Improvement of buffer properties for HEMT application using N2 ambient in a horizontal MOVPE reactor with inverted gas inlet

Hardtdegen, H.
2006

“...Heidelberger, G....”

5

Journal Article

Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

Marso, M.
2006

IEEE Electron Device Letters, 27 (2006) S. 945 - 947

“...Heidelberger, G....”
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6

Contribution to a book
Contribution to a conference proceedings

Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures

Marso, M.
2006

“...Heidelberger, G....”

7

Journal Article

Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs

Marso, M.
2006

IEEE Transactions on Electron Devices, 53 (2006) S. 1517 - 1523

“...Heidelberger, G....”

8

Journal Article

An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2006

Physica status solidi / C, 3 (2006) S. 2261 - 2264

“...Heidelberger, G....”

9

Journal Article

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2006

Physica status solidi / A, 203 (2006) S. 1876 - 1881

“...Heidelberger, G....”

10

Contribution to a book
Contribution to a conference proceedings

Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric

Heidelberger, G.
2006

“...Heidelberger, G....”

11

New Approaches for Growth Control of GaN Based HEMT Structures

Hardtdegen, H.
2006

“...Heidelberger, G....”

12

Influences of H2/N2 Carrier Gas Mixtures on the Characteristics of GaN Epilayers

Cho, Y. S.
2006

“...Heidelberger, G....”

13

Contribution to a book
Contribution to a conference proceedings

RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs

Fox, A.
2006

“...Heidelberger, G....”

14

Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

“...Heidelberger, G....”

15

Conference Presentation

An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...Heidelberger, G....”

16

Journal Article

SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

Bernát, J.
2005

Electronics letters, 41 (2005) S. 667 - 668

“...Heidelberger, G....”

17

Conference Presentation

Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs

Heidelberger, G.
2005

“...Heidelberger, G....”

18

Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

“...Heidelberger, G....”

19

Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

“...Heidelberger, G....”
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