JuLib | Articles & more - {"JARA-FIT; JARA-FIT"}

1

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus, H.
2012

Journal of applied physics, 111 (2012) S. 014904

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
Get full text Published under German "Allianz" Licensing conditions on 2012-01-05. Available in OpenAccess from 2012-01-05

2

Poster

Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110)

Holländer, B.
2010

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

3

Talk (non-conference)

From Strained Si to strained Si on Insulator (SSOI)

Buca, D.
2010

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

4

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

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5

Conference Presentation

Uniaxial strain relaxation in He-implanted (110) oriented SiGe layers

Buca, D.
2009

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

6

Journal Article

High temperature antimony ion implantation in strained silicon-on-insulator

Buca, D.
2009

Solid state electronics, 53 (2009) S. 828 - 832

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

7

Journal Article

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

Minamisawa, R. A.
2009

Applied physics letters, 95 (2009) S. 034102

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8

Journal Article

Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures

Buca, D.
2009

Journal of applied physics, 105 (2009) S. 114905

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
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9

Journal Article

Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates

Buca, B.
2009

Applied physics letters, 95 (2009) S. 144103

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
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10

Poster

Sb doping and characterization of strained silicon on SiO2 by ion beam techniques

Holländer, B.
2008

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

11

Journal Article

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath, F.
2008

Journal of applied physics, 104 (2008) S. 044908

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12

Journal Article

Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique

Khan, A. R.
2007

Semiconductor science and technology, 22 (2007) S. s212 - s215

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

13

Journal Article

Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers

Buca, D.
2007

Applied physics letters, 90 (2007) S. 032108

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
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