JuLib | Articles & more - {2010}

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1

Contribution to a book

Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI

Durgun Özben, E.
2010

“...2010...”

2

Conference Presentation

Formation and characterization of Ultra-Thin NiSi, Ni1-xPtxSi and epitaxial NiSi2on Si(001) substrates

Knoll, L.
2010

“...2010...”

3

Conference Presentation

Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate

Yu, W.
2010

“...2010...”

4

Contribution to a book
Contribution to a conference proceedings

Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation

Habicht, S.
2010

“...2010...”

5

Contribution to a book
Contribution to a conference proceedings

Silicon and Strained Silicon Nanowire Array Tunnel FETs

Sandow, C.
2010

“...2010...”

6

Contribution to a book
Contribution to a conference proceedings

High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process

Durgun Özben, E.
2010

“...2010...”

7

Contribution to a book
Contribution to a conference proceedings

Formation and Characterization of Ultra-Thin Ni Silicides on Strained and Unstrained Silicon

Knoll, L.
2010

“...2010...”

8

Contribution to a book
Contribution to a conference proceedings

Contact resistivity and nickel silicidation of strained and unstrained silicon nanowires

Habicht, S.
2010

“...2010...”

9

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

“...2010...”
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10

Contribution to a book
Contribution to a conference proceedings

Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate

Yu, W.
2010

“...2010...”

11

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

“...2010...”

12

Journal Article

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Habicht, S.
2010

Nanotechnology, 21 (2010) S. 105701

“...2010...”

13

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

“...2010...”

14

Journal Article

Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Knoll, L.
2010

IEEE Electron Device Letters, 31 (2010) S. 350 - 352

“...2010...”

15

Conference Presentation

High mobility Si-Ge channel and high-k materials for NanoMOSFETs

Zhao, Q. T.
2010

“...2010...”

16

Conference Presentation

High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

“...2010...”

17

Conference Presentation

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...2010...”

18

Contribution to a book
Contribution to a conference proceedings

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...2010...”

19

Contribution to a book
Contribution to a conference proceedings

MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack

Yu, W.
2010

“...2010...”

20

Contribution to a book
Contribution to a conference proceedings

Highmobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

Zhang, B.
2010

“...2010...”

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