JuLib | Articles & more

1

Journal Article

GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

Stange, Daniela
2018

ACS photonics, 5 (2018) 11, S. 4628 - 4636

“...2018...”

2

Journal Article

Structural properties and anisotropic electronic transport in SrIrO3 films

Kleindienst, K. R.
2018

Physical Review B Physical review / B, 98 98 (2018 2018) 11 11, S. 115113 115113

“...2018...”
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3

Journal Article

Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heterostructure

Fukuda, Masahiro
2018

Semiconductor science and technology, 33 (2018) 12, S. 124018 -

“...2018...”

4

Journal Article

In situ disentangling surface state transport channels of a topological insulator thin film by gating

Lüpke, Felix
2018

npj quantum materials, 3 (2018) 1, S. 46

“...2018...”
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5

Journal Article

The thermal stability of epitaxial GeSn layers

Zaumseil, P.
2018

APL materials, 6 (2018) 7, S. 076108

“...2018...”
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6

Journal Article

A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

Glass, Stefan
2018

IEEE journal of the Electron Devices Society, 6 (2018) S. 1070 - 1076

“...2018...”
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7

Journal Article

Structural, magnetic, and transport properties of Fe 1− x Rh x /MgO(001) films grown by molecular-beam epitaxy

Mei, Antonio B.
2018

Applied physics letters, 113 (2018) 8, S. 082403 -

“...2018...”
Published on 2018-08-22. Available in OpenAccess from 2019-08-22. Published on 2018-08-22. Available in OpenAccess from 2019-08-22.

8

Journal Article

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

von den Driesch, Nils
2018

Advanced science, 5 (2018) 6, S. 1700955

“...2018...”
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9

Journal Article

Magnetotransport signatures of three-dimensional topological insulator nanostructures

Moors, Kristof
2018

Physical Review B Physical review / B, 97 97 (2018 2018) 24 24, S. 245429 245429

“...2018...”
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10

Journal Article

Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations

Luong, Gia Vinh
2018

IEEE journal of the Electron Devices Society, 6 (2018) S. 1033 - 1040

“...2018...”
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11

Journal Article

Infrared/terahertz spectra of the photogalvanic effect in (Bi,Sb)Te based three-dimensional topological insulators

Plank, H.
2018

Physical review materials, 2 (2018) 2, S. 024202

“...2018...”
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12

Journal Article

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Rainko, Denis
2018

Scientific reports, 8 (2018) 1, S. 15557

“...2018...”
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13

Journal Article

Epitaxial GeSn: impact of process conditions on material quality

Loo, Roger
2018

Semiconductor science and technology, 33 (2018) 11, S. 114010

“...2018...”

14

Journal Article

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

Attiaoui, Anis
2018

Journal of applied physics, 123 (2018) 22, S. 223102 -

“...2018...”
Published on 2018-06-11. Available in OpenAccess from 2019-06-11. Published on 2018-06-11. Available in OpenAccess from 2019-06-11.

15

Journal Article

Tailoring Mechanically Tunable Strain Fields in Graphene

Goldsche, Matthias
2018

Nano letters, 18 (2018) 3, S. 1707 - 1713

“...2018...”
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16

Journal Article

SiGe based line tunneling field-effect transistors

Glass, Stefan
2018

Nanoelectronic Devices, 18 (2018) 1, S. 1

“...2018...”

17

Journal Article

Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content

Fischer, Inga A
2017

Semiconductor science and technology, 32 (2017) 12, S. 124004 -

“...2018...”

18

Journal Article

Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors

Glass, S.
2017

Applied physics letters, 111 (2017) 26, S. 263504 -

“...2018...”
Published on 2017-12-27. Available in OpenAccess from 2018-12-27.

19

Journal Article

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

Schulte-Braucks, Christian
2017

IEEE transactions on electron devices, 64 (2017) 10, S. 4354 - 4362

“...2018...”

20

Journal Article

Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors

Mukherjee, Santanu
2017

Physical Review B Physical review / B, 95 95 (2017 2017) 16 16, S. 161402 161402

“...2018...”
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