JuLib | Articles & more - {"Gregusová, D."}

1

Tuning III-nitride nano-LEDs via laser-micro-annealing

Mikulics, Martin
2022

“...Gregusova, D....”

2

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Mikulics, M.
2021

Semiconductor science and technology, 36 (2021) 9, S. 095040 -

“...Gregušová, D....”
Get full text OpenAccess

3

Journal Article

Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Mikulics, M.
2021

Applied physics letters, 118 (2021) 4, S. 043101 -

“...Gregušová, D....”
OpenAccess

4

Journal Article

Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Mikulics, M.
2016

Applied physics letters, 108 (2016) 6, S. 061107 -

“...Gregušová, D....”
OpenAccess OpenAccess

5

Journal Article

Reduction of skin effect losses in double-level-T-gate structure

Mikulics, M.
2014

Applied physics letters, 105 (2014) 23, S. 232102

“...Gregušová, D....”
Get full text OpenAccess OpenAccess

6

Journal Article

Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

Mikulics, Martin
2014

Semiconductor science and technology, 29 (2014) 4, S. 045022

“...Gregušová, D...”

7

Poster

Novel Douple-Level-T-Gate tecnology

Fox, Alfred
2014

2014

“...Gregusova, D....”

8

Proceedings

Towards future III-nitride based THz OEICs in the UV range

Fox, Alfred
2012

“...Gregusová, D....”

9

Journal Article

GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Kordos, P.
2012

Semiconductor science and technology, 27 (2012) 11, S. 115002 -

“...Gregušová, D...”

10

Journal Article

Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements

Mikulics, M.
2012

Semiconductor science and technology, 27 (2012) S. 105008

“...Gregusová, D....”

11

Journal Article

Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

Kordos, P.
2012

Applied physics letters, 100 (2012) S. 142113

“...Gregusová, D....”
Get full text Published under German "Allianz" Licensing conditions on 2012-04-05. Available in OpenAccess from 2012-04-05

12

Contribution to a book
Contribution to a conference proceedings

Towards future III-nitride based THz OEICs in the UV range

Fox, A.
2012

“...Gregusova, D....”

13

Journal Article

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

Mikulics, M.
2011

IEEE photonics technology letters, 23 (2011) S. 1189 - 1191

“...Gregusová, D....”

14

Journal Article

RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um

Kordos, P.
2010

IEEE Electron Device Letters, 31 (2010) S. 180 - 182

“...Gregusová, D....”

15

Journal Article

Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

Gregusova, D.
2010

Japanese journal of applied physics, 49 (2010) S. 046504

“...Gregusova, D....”

16

Journal Article

InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN

Mikulics, M.
2010

Applied physics letters, 97 (2010) S. 173505

“...Gregusová, D....”
Get full text OpenAccess OpenAccess

17

Journal Article

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-freguency measurements

Gregusová, D.
2009

Semiconductor science and technology, 24 (2009) S. 075014

“...Gregusová, D....”

18

Journal Article

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2006

Physica status solidi / A, 203 (2006) S. 1876 - 1881

“...Gregusova, D....”

19

Journal Article

Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors

Kordos, P.
2006

Semiconductor science and technology, 21 (2006) S. 67 - 71

“...Gregusova, D....”

20

Journal Article

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

Gregusova, D.
2005

Physica status solidi / C, 2 (2005) S. 2619 - 2622

“...Gregusova, D....”

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